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Browsing Articole ştiinţifice by Author "RADAUTSAN, S. I."

Browsing Articole ştiinţifice by Author "RADAUTSAN, S. I."

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  • The contribution of exciton-phonon interaction and action disorder to near-band-edge extrinsic absorption in II-III2-VI4 compounds 
    GEORGOBIANI, A. N.; URSAKI, V. V.; RADAUTSAN, S. I.; TIGINYANU, I. M. (ELSEVIER, 1985)
    Results of a study of near-band-edge absorption in both initial and annealed CdGa2S4 and CdIn2S4 single crystals at different temperatures are presented. Exciton-phonon interaction and cation disorder are shown to determine ...
  • Edge Absorption of CdIn2S4 Single Crystals in the Region of Indirect Transitions 
    RADAUTSAN, S. I.; SYRBU, N. N.; TEZLEVAN, V. E.; SHERBAN, K. F.; BARAN, N. P. (Willey Online Library, 1973)
    This note presents results of edge absorption investigations of CdIn2S4 single crystals in the region of indirect transitions on crystals having different carrier concentration.
  • Exciton-phonon spectra in CuIn/sub 1-x/Ga/sub x/S/sub 2/ crystals 
    RADAUTSAN, S. I.; SYRBU, N. N.; CRETU, R. V.; TEZLEVAN, V. E. (IEEE, 1997)
    In this work, the wavelength derivative reflection (WDR) spectra of CuIn/sub 1-x/Ga/sub x/S/sub 2/ crystals have been investigated in the region of A, B and C series. The n=1, n=2 and n=3 states are determined and contours ...
  • Far Infrared and Raman Optical Study of CdInGaS4, CdIn2S4, HgInGaS4 and CdIn2S2Se2 Crystals 
    SYRBU, N. N.; RADAUTSAN, S. I.; CRETU, R. V.; TEZLEVAN, V. E.; MOLDOVEANU, N. A. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1996)
    Raman and infrared reflectivity spectra of CdInGaS4, CdIn2G4, HgInGaS4, and CdIn2S2Se2 crystals have been investigated. The fiindamental phonon parameters, the limiting dielectric constants ϵ0 and ϵ∞ and the reflectivity ...
  • The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP 
    RADAUTSAN, S. I.; TIGINYANU, I. M.; URSAKI, V. V.; KORSHUNOV, F. P.; SOBOLEV, N. A.; KUDRYAVTSEVA, E. A. (ELSEVIER, 1993)
    The near-band-edge photoluminescence (PL) bands observed at 1.305 and 1.392 eV (T = 4.2 K) in electron-irradiated InP single crystals and epilayers have different behaviour with increasing temperature of isochronous ...
  • Optical and photoelectrical properties and band structure of single crystals of solid solutions of the system (CdS)3x–(In2S3)1−x 
    RADAUTSAN, S. I.; SYRBU, N. N.; TEZLEVAN, V. E.; SHERBAN, K. F.; STRUMBAN, E. E. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1973)
    The spectra of edge absorption, photoconductivity, and reflectivity of single crystals of solid solutions on the basis of CdIn2S4 have been studied. The values of Eg, the character of transitions responsible for Eg, the ...
  • Optical and photoelectrical properties of CdIn2S4 
    RADAUTSAN, S. I.; MOLODYAN, I. P.; SYRBU, N. N.; TEZLEVAN, V. E.; SHIPITKA, M. A. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1972)
    The present paper contains results of a study of the edge absorption at 293 and 77 0K, the spectral distribution of the photoconductivity, and the reflectivity spectra in the fundamental absorption region. An interpretation ...
  • Optical Modulation Spectra of CdP2 Crystals and Ni-CdP2 Schottky Barriers 
    RADAUTSAN, S. I.; SYRBU, N. N.; KIOSEV, V. K. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1974)
    The relative photosensitivity spectra of Ni-CdP2 Schottky barriers have been investigated experimentally; in these spectra a structure consisting of nine maxima has been observed in the intrinsic absorption region. The ...
  • Optical spectra and electroabsorption of CdP2 and CdP4 single crystals 
    RADAUTSAN, S. I.; SYRBU, N. N.; TESLEVAN, V. E.; CHUMAK, I. V. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1973)
    The anisotropy of the absorption and electroabsorption spectra of CdP2 and CdP4, single crystals has been investigated. A number of interband gaps has been determined and specified. The energies and the type of phonons ...
  • Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode 
    RADAUTSAN, S. I.; MOLODYAN, I. P.; BULYARSKII, S. V.; SYRBU, N. N.; TEZLEVAN, V. E. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1974)
    The photoelectrical properties of Schottky barriers Au-CdIn2S4 in a broad energy region have been considered. The optical direct and indirect transitions and the spin-orbit splittings of zones Γ15(Γ7), Γ15(Γ8) in L1(L6) ...
  • Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers 
    RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V. (Springer Nature Switzerland, 1994)
    Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of ...
  • Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals 
    URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I. (IEEE, 1995)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in ...
  • The superposition of the lattice radiation and reflectivity spectra of tetragonal TeO/sub 2/ crystals 
    SYRBU, N. N.; RADAUTSAN, S. I.; CRETU, R. V.; MUSHINSKII, V. P.; CEBOTARI, V. Z. (IEEE, 1995)
    The superposition of infrared reflectivity spectra end lattice radiation of TeO/sub 2/ crystals have been investigated. Both radiation spectra at high temperatures and absorption spectra in the two-phonon range for ...
  • Vibrational properties of CdGa2S4 
    NEUMANN, H.; SOBOTTA, H.; RIEDE, V.; SYRBU, N. N.; RADAUTSAN, S. I. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1984)
    Polarization-dependent infrared reflectivity spectra of CdGa2S4 are measured at 300 K in the wavenumber range from 180 to 500 cm−1. The analysis of the spectra yields three E and four B modes in this frequency range. The ...
  • Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals 
    URSAKI, V. V.; TIGINYANU, I. M.; ICHIZLI, V. M.; TERLETSKY, A. I.; PYSHNAYA, N. B.; RADAUTSAN, S. I. (IEEE, 1996)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing ...

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