The contribution of exciton-phonon interaction and action disorder to near-band-edge extrinsic absorption in II-III2-VI4 compounds

GEORGOBIANI, A. N.; URSAKI, V. V.; RADAUTSAN, S. I.; TIGINYANU, I. M.

The contribution of exciton-phonon interaction and action disorder to near-band-edge extrinsic absorption in II-III2-VI4 compounds

GEORGOBIANI, A. N.; URSAKI, V. V.; RADAUTSAN, S. I.; TIGINYANU, I. M.

URI: https://doi.org/10.1016/0038-1098(85)90730-6
http://repository.utm.md/handle/5014/11553

Date: 1985

Abstract:

Results of a study of near-band-edge absorption in both initial and annealed CdGa2S4 and CdIn2S4 single crystals at different temperatures are presented. Exciton-phonon interaction and cation disorder are shown to determine the absorption edge in CdGa2S4 and CdIn2S4 sompounds correspondingly.