Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals

URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I.

Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals

URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I.

URI: https://doi.org/10.1109/SMICND.1995.494873
http://repository.utm.md/handle/5014/11552

Date: 1995

Abstract:

The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in impurity activation improvement, the optimum electrical parameters of implanted layers being achieved after sample annealing at 700/spl deg/C.