Articole

Recent Submissions

  • TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (Elsevier, 2004)
    Influences of temperature and annealing on the electrical and sensing properties toward NO2 of tellurium based films were investigated. The annealing at temperatures more than 100°C causes a sharp decrease both of electrical ...
  • TSIULYANU, D.; MARIAN, T.; TIULEANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2009)
    The impedance spectra of tellurium films with interdigital platinum electrodes were investigated in air at temperatures between 10 and 50 °C. Cole–Cole analysis made it possible to assess time constants, resistance, and ...
  • MARIAN, S.; POTJE-KAMLOTH, K.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2000)
    For the first time it was observed that thin films based on artificial dimorphite (As4S3) exhibit gas sensitivity at room temperature. A sandwich metal-semiconductor-metal (MSM) structure with dimorphite as the semiconducting ...
  • CIOBANU, M.; TSIULYANU, D. (Virtual Company of Physics, 2018)
    Amorphous tellurium and Te based quaternary films have been grown onto both glassy (Pyrex) and ceramic Al2O3 substrates by a high speed thermal deposition in vacuum. The SEM and XRD analysis of the films was provided and ...
  • TSIULYANU, D. I.; TRIDUCH, G. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1991)
    The formation of a Schottky-Mott barrier at the interface of metals with chalcogenide glasses (ChG) is studied several papers. Many parameters of these barriers and the physical factors responsible for their formation ...
  • TSIULYANU, D.; MOCREAC, O. (Elsevier, 2013)
    The damping of sensitivity induced by high gas (NO2) concentration in tellurium films was observed for the first time. The phenomenon becomes apparent in ultrathin (less than 40nm) shown by AFM, SEM and XRD analyses to be ...
  • TSIULYANU, D.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2005)
    Sensing characteristics of tellurium-based thin films for NO2 monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical ...
  • MARIAN, S.; TSIULYANU, D.; MARIAN, T.; LIESS, H.-D. (De Gruyter, 2001)
    The authors report about characterization of chalcogenide-based thin films, as a materials for gas-sensing applications. The sensing behavior of the As–S–Te films was tested with environmental pollutant gases such as NO2, ...
  • TSIULYANU, D.; MARIAN, S.; MIRON, V.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 2000)
    For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO/sub 2/. ...
  • TSIULYANU, D. I. (IEEE, 1995)
    Possibilities of application in microelectronics of chalcogenide glassy semiconductors (ChGS) as inorganic high-resolution photoresists is treated. A brief consideration of three main effects: photostructural transformations, ...
  • TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2003)
    Evidence for direct application of the chalcogenide semiconductors for gas sensing is considered. Two kinds of sensitive thin film structures have been fabricated and studied, using both artificial dimorphite (As4S3) and ...
  • TSIULYANU, D. I.; ANDRIESH, A. M.; KOLOMEYKO, E. P. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1978)
    Results are given of electrophysical properties of isotype amorphous As2S3-crystalline p-Si heterojunctions. It is shown that the forward currents are limited by the space charge in As2S3 and the reverse ones are limited ...
  • АНДРИЕШ, А. М.; НЕФЕДОВ, В. Я .; ЦИУЛЯНУ, Д. Я .; СОКОЛОВ, А. Н.; ТРИДУХ, Г. М.; ГРИНШПУН, Л. Б. (Ioffe Institute, RAS, 1990)
    В качестве объекта исследований использовались тонкослойные структуры Al—As 2S8Ge 4 , изготовленные термическим вакуумным напылением на стеклянные подложки с предварительно нанесенным проводящим слоем двуокиси олова. ...
  • TSIULYANU, D. I.; GUMENYUK, N. A. (Springer Nature Switzerland, 1990)
    The interest in the optical properties of glassy materials of the As-S-Ge system and thin layers based on them has increased recently owing to the development of electro-optics and integrated optics. These materials form ...
  • TSIULYANU, Dumitru; CIOBANU, Marina; MOCREAC, Olga (Springer Nature Switzerland, 2018)
    The gas sensing performance of chalcogenide thin films, investigated by the method of impedance spectroscopy is reported and discussed in order to assess their use in future gas sensors operating at room temperature.
  • TSIULYANU, D.; MARIAN, S.; LIESS, M.; LIESS, H.-D.; EISELE, I. (IEEE, 2004)
    A simple and stable NO/sub 2/ gas sensor device with rapid response/recovery time and low operating temperature has been developed using polycrystalline tellurium. The effect of thickness of the sample, thermal treatment ...
  • STRATAN, I.; TSIULYANU, D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2006)
    The switching properties of a Programmable Metallization Cell (PMC) structure based on the Ag-As2S3 solid electrolyte were investigated. It was found that at 120 mV of forward bias voltage the device switches from an off ...
  • TSIULYANU, D.; MARIAN, S.; GUBA, M.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 1998)
    The sandwich metal-dimorphite(As/sub 4/S/sub 3/)-metal structure is used as a sensor for detection of propylamine (P/sub r/NH/sub 2/) vapor. The gas induced shifts of the current-voltage characteristics as well as transient ...
  • COJOCARI, O.; SYDLO, C.; HARTNAGEL, H.-L. (IEEE, 2005)
    Whisker integrated diode (WID) is a fully vertical Schottky-based structure suitable for hybrid integration in THz-systems. This paper presents design, simulation and DC-measurement results of a WID for THz-mixing application.
  • COJOCARI, O.; OPREA, I.; SYDLO, C.; ZIMMERMANN, R.; WALBER, A.; HENNEBERGER, R.; HARTNAGEL, H.-L. (IEEE, 2005)
    Schottky structures based on quasi-vertical diode (QVD) design concept are essentially improved by optimization of the GaAs/AlGaAs wafer layout and fabrication process. Insertion of a 4 mum-thin epitaxial AlGaAs layer ...

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