Browsing Articole by Issue Date

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  • ANEDDA, A.; SERPI, A.; KARAVANSKII, V. A.; TIGINYANU, I. M.; ICHIZLI, V. M. (American Institute of Physics, 1995)
    Porous GaP layers prepared by electrochemical anodization of (100)-oriented bulk material was found to exhibit blue and ultraviolet photoluminescence when excited by a KrF excimer laser. The energy position of the UV ...
  • BOSTAN, I.; DULGHERU, V. (Springer Nature B. V., 1997)
    The development of society in the XX century brought creativity to the foreground of research. It happened because practically in all fields of activity the social demand for creativity became really urgent. In other words, ...
  • PROHOROV, A. M.; RADAUTSAN, S.; SYRBU, A.; IAKOVLEV, V. (Springer Science+Business Media Dordrecht, 1997)
    A study of laser facets at high optical power density levels resulted in elaboration of a new characterization technique for laser diodes . A new facet coating system based on ZnSe was applied to InGaAsP high power laser ...
  • BOSTAN, I. (Springer Science+Business Media Dordrecht, 1997)
    The world is moving towards the gloaming of the 20th century. We, the people-witnesses of this dramatic century, are seeking for problem-solving strategies in the following matters: what will the next day look like, being ...
  • LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 1999)
    Two different morphologies of porous layers were observed in (100)-oriented anodically etched in an aqueous solution of . At high current density anodization leads to the formation of so-called current-line oriented ...
  • LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2001)
    Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous ...
  • LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H.; TIGINYANU, I. M. (American Institute of Physics, 2001)
    Pores in GaAs in the micrometer range and oriented in |111| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very ...
  • SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)
    Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...
  • STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; LANGA, S.; FÖLL, H.; HARTNAGEL, H. L. (American Institute of Physics, 2001)
    Porous layers fabricated by anodic etching of n-GaPn-GaP substrates in a sulfuric acid solution were studied by electron microscopy and cathodoluminescence (CL) microanalysis. The morphology of porous layers was found to ...
  • TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)
    GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
  • LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2002)
    The morphology of porous layers obtained by electrochemical etching of (100) oriented n-GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities, up to 5 mA/cm2, pores in the form of ...
  • SONTEA, Victor (Societatea Fizicienilor din Moldova, 2003)
    Activităţile şi meritele profesorului universitar Teodor Şişianu dovedesc că domnia sa este un savant, pedagog şi personalitate de excelenţă care a contribuit şi contribuie considerabil la dezvoltarea ştiinţei, învăţămîntului ...
  • FÖLL, H.; LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of ...
  • TIGINYANU, I. M.; KRAVETSKY, I. V.; LANGA, S.; MAROWSKY, G.; MONECKE, J.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that under defined etching conditions uniformly distributed pores ...
  • LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage ...
  • FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited ...
  • CHRISTOPHERSEN, M.; LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    This paper compares the morphologies of porous silicon and porous III–V compounds and discusses their growth mechanisms. Looking into the fine structure of pores, in silicon (meso)pores with intercalating octahedra are ...
  • SHISHIYANU, S. T.; LUPAN, O. I.; SHISHIYANU, T. S.; ŞONTEA, V. P.; RAILEAN, S. K. (ELSEVIER, 2004)
    Anodic oxidation under ultraviolet (UV) illumination and rapid photothermal processing technique used for high quality oxide preparation in terms of device surface passivation and gate or tunnel dielectrics are reported.
  • SHISHIYANU, Sergiu T.; SHISHIYANU, Teodor S.; LUPAN, Oleg I. (ELSEVIER, 2005)
    NO2 gas sensor was fabricated by successive ionic layer adsorption and reaction (SILAR) technique and rapid photothermal processing (RPP) of the Sn-doped ZnO film. The experimental results shows that tin doping of zinc ...
  • SHISHIYANU, S. T.; LUPAN, O. I.; MONAICO, E. V.; URSAKI, V. V.; SHISHIYANU, T. S.; TIGINYANU, I. M. (ELSEVIER, 2005)
    Aluminum-doped zinc oxide (ZnO:Al) films fabricated by chemical bath deposition are characterized using scanning electron microscopy and photoluminescence (PL) spectroscopy. The impact of rapid thermal annealing (RTA) upon ...

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