Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers

RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V.

Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers

RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V.

URI: https://doi.org/10.1007/BF03055248
http://repository.utm.md/handle/5014/11566

Date: 1994

Abstract:

Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of the conductivity compensation degree with the dose of electron irradiation has been observed, which proves to be connected with the intensive formation of deep (Ec-0.4 eV) radiation donor-type defects.