Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals

URSAKI, V. V.; TIGINYANU, I. M.; ICHIZLI, V. M.; TERLETSKY, A. I.; PYSHNAYA, N. B.; RADAUTSAN, S. I.

Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals

URSAKI, V. V.; TIGINYANU, I. M.; ICHIZLI, V. M.; TERLETSKY, A. I.; PYSHNAYA, N. B.; RADAUTSAN, S. I.

URI: https://doi.org/10.1109/SMICND.1996.557405
http://repository.utm.md/handle/5014/11616

Date: 1996

Abstract:

The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures T/sub ann/>600/spl deg/C.