The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP

RADAUTSAN, S. I.; TIGINYANU, I. M.; URSAKI, V. V.; KORSHUNOV, F. P.; SOBOLEV, N. A.; KUDRYAVTSEVA, E. A.

The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP

RADAUTSAN, S. I.; TIGINYANU, I. M.; URSAKI, V. V.; KORSHUNOV, F. P.; SOBOLEV, N. A.; KUDRYAVTSEVA, E. A.

URI: https://doi.org/10.1016/0038-1098(93)90012-C
http://repository.utm.md/handle/5014/11374

Date: 1993

Abstract:

The near-band-edge photoluminescence (PL) bands observed at 1.305 and 1.392 eV (T = 4.2 K) in electron-irradiated InP single crystals and epilayers have different behaviour with increasing temperature of isochronous annealing. Moreover, the band at 1.392 eV shows a complex structure, at least in n-InP epilayers. On the ground of these new results, an earlier proposed connection between these PL bands and the Inp-antisite defect may require a revision.