Articole din publicaţii internaţionale: Recent submissions

  • Cathodoluminescence microanalysis of porous GaP and InP structures 
    TIGINYANU, I. M.; LANGA, S.; SIRBU, L.; MONAICO, E.; STEVENS-KALCEFF, M. A.; FÖLL, H. (EDP Sciences, 2004)
    Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP and n-InP substrates in aqueous solutions of sulfuric and ...
  • Audio-Transducer for In-Ear-Applications based on CMOS-compatible electrostatic actuators 
    SPITZ, B.; WALL, F.; SCHENK, H.; MELNIKOV, A.; EHRIG, L.; LANGA, S.; STOLZ, M.; KAISER, B.; CONRAD, H.; SCHENK, H. (IEEE, 2019)
    Recently an innovative mSpeaker technology, based on a novel kind of CMOS compatible small gap electrostatic actuators for large deflection, has been introduced. In this paper, we devise methods to model such speakers in ...
  • A small-gap electrostatic micro-actuator for large deflections 
    CONRAD, Holger; SCHENK, Harald; KAISER, Bert; LANGA, Sergiu; GAUDET, Matthieu; SCHIMMANZ, Klaus; STOLZ, Michael; LENZ, Miriam (Springer Nature Limited, 2015)
    Common quasi-static electrostatic micro actuators have significant limitations in deflection due to electrode separation and unstable drive regions. State-of-the-art electrostatic actuators achieve maximum deflections of ...
  • A Novel Electrostatic Actuator Class 
    CONRAD, H.; KAISER, B.; GAUDET, M.; LANGA, S.; STOLZ, M.; UHLIG, S.; SCHIMMANZ, K.; SCHENK, H. (ELSEVIER, 2016)
    Common quasi-static electrostatic micro actuators have significant limitations in deflection due to electrode separation and unstable drive regions. These actuators suffer from an operational instability, the so-called ...
  • A contribution to the expansion of the applicability of electrostatic forces in micro transducers 
    SCHENK, Harald; CONRAD, Holger; GAUDET, Matthieu; UHLIG, Sebastian; KAISER, Bert; LANGA, Sergiu; STOLZ, Michael; SCHIMMANZ, Klaus (Society of Photo-Optical Instrumentation Engineers, SPIE, 2017)
    Electrostatic actuation is highly efficient at micro and nanoscale. However, large deflection in common electrostatically driven MEMS requires large electrode separation and thus high driving voltages. To offer a solution ...
  • Artizani din localitățile din nordul Republicii Moldova – promotori ai covorului tradițional moldovenesc 
    TOCARCIUC, Alina (CEP USM, 2020)
    Alesul covoarelor a fost un meșteșug tradițional atestat în mai multe localități din raioanele Orhei, Strășeni, Călărași, precum și în cadrul mănăstirilor de călugărițe Tabăra, Hâncu, Hirova, Hagimus. În comunicare, în ...
  • Activitatea atelierelor de confecționare a costumului național moldovenesc în primele decenii postbelice 
    BUJOREAN, Tatiana (CEP USM, 2020)
    O trecere în revistă a principalelor aspecte care circumscriu activitatea atelierelor de producție artistică din RSSM (denumite arteluri până în anul 1960) reprezintă un subiect important pentru domeniul etnologiei și ...
  • Educația între prezent și viitor 
    LUNGU, Viorelia (Universitatea de Stat din Tiraspol, 2019)
    Educația are un rol important în o societate în continuă schimbare. În acest context este necesar de a stabili atât realizările cât și competențele necesare pentru a determina performanța, o viziune prospectivă, promovând ...
  • Calcularea limitelor 
    BOTNARU, Dumitru; ŢURCANU, Alina (Universitatea de Stat din Tiraspol, 2018)
    În lucrare sunt studiate o serie de exemple de calculare a limitelor, fiind folosite anumite procedee. A series of examples of limit calculation are studied in the paper, using some methods.
  • Pd-Functionalized ZnO:Eu Columnar Films for Room-Temperature Hydrogen Gas Sensing: A Combined Experimental and Computational Approach 
    LUPAN, Cristian; KHALEDIALIDUSTI, Rasoul; MISHRA, Abhishek Kumar; POSTICA, Vasile; TERASA, Maik-Ivo; MAGARIU, Nicolae; PAUPORTÉ, Thierry; VIANA, Bruno; DREWES, Jonas; VAHL, Alexander; FAUPEL, Franz; ADELUNG, Rainer (American Chemical Society, 2020)
    Reducing the operating temperature to room temperature is a serious obstacle on long-life sensitivity with long-term stability performances of gas sensors based on semiconducting oxides, and this should be overcome by new ...
  • ZnO Micro/Nano Structures by MOCVD and Vapour Transport Technique: Growth and Characterization 
    RUSU, E.; BURLACU, A.; URSAKI, V.; STRATAN, G.; PURICA, M.; BUDIANU, E.; MONAICO, E. (IEEE, 2007)
    ZnO micro/nano structures were grown by metalo-organic chemical vapour deposition (MOCVD) and chemical vapour transport and condensation deposition process on Si and glass substrates. Using MOCVD method were grown uniform ...
  • Observation of surface phonon mode in porous GaP 
    KARAVANSKII, V. A.; ANASTASSAKIS, Evangelos; RAPTIS, Y. S.; SOKOLOV, V. N.; TIGINYANU, I. M.; URSAKI, V. V. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1996)
    Simple preparation technique of nanoporous semiconductors by anodization has opened new ways to form and investigate quantum and surface effects in nanosized objects. It has also allowed technologists to extend the range ...
  • Raman and electrical characterization of n-InP implanted by 630-keV nitrogen 
    TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M. (IEEE, 1996)
    The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the ...
  • Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ co-implantation in InP single crystals 
    URSAKI, V. V.; TIGINYANU, I. M.; ICHIZLI, V. M.; TERLETSKY, A. I.; PYSHNAYA, N. B.; RADAUTSAN, S. I. (IEEE, 1996)
    The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing ...
  • Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; URSAKI, V. V.; MAROWSKY, G.; HARTNAGEL, H. L. (IEEE, 1997)
    InP is known to be characterized by a low activation efficiency of p-type dopants. Some attempts have been previously undertaken to use the coimplantation of P/sup +/ ions in order to improve the activation efficiency of ...
  • Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy 
    PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
    High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...
  • Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing 
    URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M. (IEEE, 1998)
    It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow ...
  • Spatial dispersion effects in the exciton-polariton reflectivity spectra of CuGaS/sub 2/ crystals 
    SYRBU, N.; URSAKI, V.; NYARI, T.; BLAJE, M.; PRUNIC, P.; TEZLEVAN, V. (IEEE, 2000)
    The analysis of the exciton reflectivity contour in CuGaS/sub 2/ crystals at 8 K was carried out. Absorption and luminescence spectroscopy was employed for additional characterization. The value of the exciton Ridberg ...
  • Photoluminescence study of /spl alpha/-ZnAl/sub 2/S/sub 4/ single crystals 
    URSAKI, V.; BOLDURESCU, V.; BURLAKOV, I.; SYRBU, N.; NYARI, T. (IEEE, 2000)
    Photoluminescence (PL) spectra of ZnAl/sub 2/S/sub 4/ crystals with spinel structure were studied under the extrinsic excitation. The PL bands at 0.98 eV and 1.34 eV are suggested to be caused by native defects; while the ...
  • Photoluminescence Study of Nitrogen-Related States in ZnSe 
    IVANOVA, Galina N.; NEDEOGLO, Dmitrii D.; NEDEOGLO, Natalia D.; RUSU, Emil V.; SIRKELI, Vadim P.; STRATAN, Gheorghe I.; URSAKI, Veacheslav V. (AIP Publishing LLC, 2007)
    Photoluminescence of N-doped ZnSe crystals is studied at temperatures between 10 and 300 K. Doping with N leads to the formation of simple N-based donor and acceptor defects, as well as associative N-based acceptors. The ...

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