Photoluminescence Study of Nitrogen-Related States in ZnSe

Abstract

Photoluminescence of N-doped ZnSe crystals is studied at temperatures between 10 and 300 K. Doping with N leads to the formation of simple N-based donor and acceptor defects, as well as associative N-based acceptors. The nature and the structure of N-based luminescence centres and the mechanisms of radiative recombination are discussed.