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Browsing Articole din publicaţii internaţionale by Issue Date

Browsing Articole din publicaţii internaţionale by Issue Date

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  • TIGINYANU, I. M.; LOTTICI, P. P.; RAZZETTI, C.; GENNARI, S. (IOP Publishing, 1993)
    We report the Raman spectrum of defect chalcopyrite compounds CdAl2S4, CdGa2S4, ZnGa2S4 and of the isostructural mixed compounds Zn0.7Cd0.3Al2S4, ZnGa0.2Al1.8S4 and ZnGa0.8Al1.2S4. The role of the cations on the vibrational ...
  • ANEDDA, A.; SERPI, A.; KARAVANSKII, V. A.; TIGINYANU, I. M.; ICHIZLI, V. M. (American Institute of Physics, 1995)
    Porous GaP layers prepared by electrochemical anodization of (100)-oriented bulk material was found to exhibit blue and ultraviolet photoluminescence when excited by a KrF excimer laser. The energy position of the UV ...
  • BOSTAN, I.; DULGHERU, V. (Springer Nature B. V., 1997)
    The development of society in the XX century brought creativity to the foreground of research. It happened because practically in all fields of activity the social demand for creativity became really urgent. In other words, ...
  • PROHOROV, A. M.; RADAUTSAN, S.; SYRBU, A.; IAKOVLEV, V. (Springer Science+Business Media Dordrecht, 1997)
    A study of laser facets at high optical power density levels resulted in elaboration of a new characterization technique for laser diodes . A new facet coating system based on ZnSe was applied to InGaAsP high power laser ...
  • BOSTAN, I. (Springer Science+Business Media Dordrecht, 1997)
    The world is moving towards the gloaming of the 20th century. We, the people-witnesses of this dramatic century, are seeking for problem-solving strategies in the following matters: what will the next day look like, being ...
  • LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 1999)
    Two different morphologies of porous layers were observed in (100)-oriented anodically etched in an aqueous solution of . At high current density anodization leads to the formation of so-called current-line oriented ...
  • SARUA, A.; TIGINYANU, I. M.; URSAKI, V. V.; IRMER, G.; MONECKE, J.; HARTNAGEL, H. L. (ELSEVIER, 1999)
    Free-standing porous GaP membranes were fabricated by anodic etching of (111)-oriented crystalline substrates in H2SO4 aqueous solution. The formation of a column-shaped porous structure with average structure dimension ...
  • SARUA, A.; GÄRTNER, G.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; HARTNAGEL, H. L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2000)
    Porous layers on the basis of LEC-grown n-type crystals of (111)-GaP and (100)-InP were fabricated by electrochemical etching in aqueous acidic solutions. The prepared samples were studied by micro-Raman analysis and by ...
  • SARUA, A.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; SCHWAB, C.; GROB, J.-J.; HARTNAGEL, H. L. (American Institute of Physics, 2000)
    Porous layers on (100)-oriented n-type liquid encapsulated Czochralski grown GaP crystals were fabricated by electrochemical etching in a H2SO4 aqueous solution and analyzed by scanning electron microscopy. 12C+ ions were ...
  • LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2001)
    Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous ...
  • LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H.; TIGINYANU, I. M. (American Institute of Physics, 2001)
    Pores in GaAs in the micrometer range and oriented in |111| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very ...
  • SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)
    Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...
  • STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; LANGA, S.; FÖLL, H.; HARTNAGEL, H. L. (American Institute of Physics, 2001)
    Porous layers fabricated by anodic etching of n-GaPn-GaP substrates in a sulfuric acid solution were studied by electron microscopy and cathodoluminescence (CL) microanalysis. The morphology of porous layers was found to ...
  • TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)
    GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
  • URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; FOCA, E. V.; SYRBU, N. N. (IOP Publishing, 2001)
    Porous layers fabricated by electrochemical anodization of (111)A-oriented n-GaP:Te substrates were studied by Raman scattering spectroscopy in the temperature interval from 10 to 300 K. Along with the transverse-optical ...
  • LE RENDU, P.; NGUYEN, T. P.; LAKEHAL, M.; IP, J.; TIGINYANU, I. M.; SARUA, A.; IRMER, G. (ELSEVIER, 2001)
    We report results obtained from physical characterization of thin composite films made by mixing poly(p-phenylene vinylene) (PPV) and porous gallium phosphide (GaP) particles with different GaP concentrations. Optical ...
  • TIGINYANU, I. M.; LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; SERGENTU, V.; FOCA, E.; RIOS, O.; FÖLL, H. (Cambridge University Press, 2001)
    Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds (GaAs, InP, GaP) by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore ...
  • LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2002)
    The morphology of porous layers obtained by electrochemical etching of (100) oriented n-GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities, up to 5 mA/cm2, pores in the form of ...
  • HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V.; STEVENS-KALCEFF, M. A.; TIGINYANU, I. M. (ELSEVIER, 2002)
    Low-pressure MOCVD is used to grow AlN/GaN MIS-type heterostructures with AlN thickness between 3 and 35 nm. The two-dimensional electron gas (2DEG) Hall mobility was found to decrease with AlN thickness. The measured room ...

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