Zn/sup +/, Zn/sup +//P/sup +/ and Zn/sup +//As/sup +/ implanted InP: study of electrical and symmetry properties

Abstract

InP is known to be characterized by a low activation efficiency of p-type dopants. Some attempts have been previously undertaken to use the coimplantation of P/sup +/ ions in order to improve the activation efficiency of Be and Mg in InP. The goal of this work was to study the activation efficiency of Zn impurity coimplanted with P/sup +/ and As/sup +/ ions in n-InP as well as the peculiarities of crystal lattice recovering during annealing. The latter was investigated by optical second harmonic generation (SHG) method which proved to be a versatile and sensitive probe of symmetry properties of InP near-surface layers.