Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M.

Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

TIGINYANU, I. M.; MIAO, J.; HARTNAGEL, H. L.; RUCK, D.; TINSCHERT, K.; URSAKI, V. V.; ICHIZLI, V. M.

URI: https://doi.org/10.1109/ICIPRM.1996.492319
http://repository.utm.md/handle/5014/11622

Date: 1996

Abstract:

The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the lattice was probed by resonant Raman scattering (RS) measurements. Layers with resistivity as high as 10/sup 4/ /spl Omega/.cm were formed by implantation and subsequent annealing of the samples which allowed one to fabricate InP membranes for sensor applications by using selective electrochemical etching techniques.