Articole din publicaţii internaţionale: Recent submissions

  • Ultraviolet photoconductive sensor based on single ZnO nanowire 
    LUPAN, O.; CHAI, G.; CHOW, L.; EMELCHENKO, G. A.; HEINRICH, H.; URSAKI, V. V.; GRUZINTSEV, A. N.; TIGINYANU, I. M.; REDKIN, A. N. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2010)
    ZnO nanowires were synthesized by the CVD procedure and have been investigated by SEM, TEM, SAED, Raman, and cw PL spectroscopy. The fabrication of an ultraviolet (UV) photoconductive detector based on single ZnO nanowire ...
  • Multiphonon resonant Raman scattering in ZnO crystals and nanostructured layers 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; RUSU, E. V.; EMELCHENKO, G. A.; MASALOV, V. M.; SAMAROV, E. N. (American Physical Society, 2004)
    Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk ZnO crystals and layers, including nanostructured and highly conductive films, excited by 351.1 and 363.8 nm laser lines in the temperature ...
  • Crystallinity and optical properties of β-Ga2O3/Ga2S3 layered structure obtained by thermal annealing of Ga2S3 semiconductor 
    SPRINCEAN, Veaceslav; LUPAN, Oleg; CARAMAN, Iuliana; UNTILA, Dumitru; POSTICA, Vasile; COJOCARU, Ala; GAPEEVA, Anna; PALACHI, Leonid; ADELING, Rainer; TIGINYANU, Ion; CARAMAN, Mihail (ELSEVIER, 2021)
    In this work, the β-Ga2O3 nanostructures were obtained by thermal annealing in air of β-Ga2S3 single crystals at relatively high temperatures of 970 K, 1070 K and 1170 K for 6 h. The results show that the properties of ...
  • Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na/sub 2/SiO/sub 3/ solution interface 
    COJOCARU, A.; SHERBAN, D.; SIMASHKEVICH, A.; TIGINYANU, I.; TSIULYANU, I.; URSAKI, V. (IEEE, 2002)
    The photoelectrochemical properties of the electrolyte-semiconductor interface in the chains formed by carbon auxiliary electrode-electrolyte-n-GaAs or n-InP semiconductors have been investigated. Besides bulk n-GaAs ...
  • Design of trapped surface charge for the photoelectrochemical fabrication of GaN mesostructures 
    POPA, V.; VOLCIUC, O.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2004)
    In this note we demonstrate that artificially introduced surface defects in GaN epilayers are stable against photoelectrochemical etching in aqueous solution of KOH. The origin of this stability is attributed to the negative ...
  • Impedance Spectroscopy as a Powerful Tool for Better Understanding and Controlling the Pore Growth Mechanism in Semiconductors 
    COJOCARU, A.; FOCA, E.; CARSTENSEN, J.; LEISNER, M.; TIGINYANU, I. M.; FÖLL, H. (Springer, Berlin, Heidelberg, 2009)
    This work shows new results towards a better understanding of macropore growth in semiconductor phenomenology by using in-situ FFT impedance spectroscopy. A new interpretation of the voltage impedance is proposed. In ...
  • Rayleigh scattering of a metal nanoparticle on a flat dielectric surface 
    SERGENTU, V.; ESINENCO, D.; SIRBU, L.; VODĂ, I.; VOICU, R.; TIGINYANU, I. M.; URSAKI, V. (IEEE, 2010)
    It is shown experimentally and theoretically that electromagnetic interaction of a nanoparticle with a flat dielectric surface leads to occurrence of an additional peak in the spectrum of Rayleigh scattering which is due ...
  • Retroreflection from disordered porous semiconductors 
    PRISLOPSKI, S.; TIGINYANU, I. M.; GHIMPU, L.; MONAICO, E.; SIRBU, L.; ZHUKOVSKY, S. V.; GAPONENKO, S. V. (IEEE, 2011)
    Prominent retroreflection is experimentally observed in disordered porous InP membranes. It is believed to be the result of an interplay between Fresnel-like and Bragg-like reflection for different components of an impinging ...
  • Photoinduced modification of surface states in nanoporous InP observed by terahertz spectroscopy 
    LLOYD-HUGHES, James; MUELLER, Susanne; SCALARI, Giacomo; BISHOP, Hugh; CROSSLEY, Alison; ENACHI, Mihai; SIRBU, Lilian; TIGINYANU, Ion (American Physical Society, 2012)
    A precise control of the surface properties of semiconductor nanomaterials is vital for their functionality and use in many opto-electronic applications. Terahertz time-domain spectroscopy allows the non-contact investigation ...
  • Microcharacterization of GaN Nanomembranes Using Cathodoluminescence Microanalysis 
    STEVENS-KALCEFF, Marion A.; TIGINYANU, I. M.; POPA, V. (ProQuest LLC, 2012)
    Gallium nitride (GaN) is a thermally stable, chemically inert wide-band-gap compound semiconductor with applications in high temperature, high power, high frequency electronic devices, solid state sensors, optoelectronics ...
  • Electrochemistry-based maskless nanofabrication 
    TIGINYANU, Ion; MONAICO, Eduard; POPA, Veaceslav (IEEE, 2012)
    A review of technological approaches for 2D and 3D nanostructuring of semiconductor compounds by using radiation treatment and electrochemical etching is presented. We demonstrate novel spatial nanoarchitectures based on ...
  • Optical characterization of novel terahertz emitters 
    STEELE, J. A.; RADHANPURA, K.; LEWIS, R. A.; SIRBU, L.; TIGINYANU, I. M. (IEEE, 2014)
    Bulk (111) and (100) InP wafers and nanoporous membranes have been studied using free space time-domain spectroscopy. The nonlinear optical response is shown to be dependent on heavy ion (Kr+15, Xe+23) dose, crystallographic ...
  • Ultrashort Electromagnetic Modes in the Low Frequency Region of the Spectrum in a Nanocylinder Array 
    SIRBU, L.; SERGENTU, V.; MULLER, R.; URSAKI, V.; TIGINYANU, I. M. (Springer Nature Switzerland, 2014)
    In this work we present the theoretical model of existence of ultrashort modes in low frequency region of the electromagnetic spectrum in a system of nanocilinders array. These modes have no analogue in a spectrum with ...
  • AB2X4 Compounds with Other Types of Structures at High Pressures 
    URSAKI, V. V.; TIGINYANU, I. M. (Springer-Verlag Berlin Heidelberg, 2014)
    Phase transitions in AIIBIII2XVI4 compounds with initial structures different from cubic spinel or tetragonal chalcopyrites and stannites are analyzed in this chapter on the instance of layered AIIInGaS4 crystals with Cd, ...
  • Structure and morphology of nanoporous zno and dark current-Voltage characteristics of the glass/(TCO)/zno/poly[2,7-(9,9-dioctylfluorene)-alt-(5,5'-bithiophene)/ag structure 
    GHIMPU, Lidia; POTLOG, Tamara; RESMERITA, Ana-Maria; TIGINYANU, Ion; FARCAS, Aurica (Wiley Periodicals Inc., 2015)
    The hybrid organic-inorganic structure based on glass/(TCO)/nanoporous ZnO/poly[2,7-(9,9-dioctylfluorene)-alt-(5,5′-bithiophene)]/Ag that was prepared by physical deposition has been investigated. The structure of the ...
  • Special issue on electrochemical processing of semiconductor materials 
    FÖLL, Helmut; GERNGROSS, Mark-Daniel; SAILOR, Michael J.; TIGINYANU, Ion (IOP Publishing, 2015)
    The first part of this issue focuses on the formation of porous semiconductor structures by diverse processing techniques: electrochemical etching, metal-assisted etching, and stain etching. The second part covers the ...
  • Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires 
    MONAICO, Elena I.; MONAICO, Eduard V.; URSAKI, Veaceslav V.; HONNALI, Shashank; POSTOLACHE, Vitalie; LEISTNER, Karin; NIELSCH, Kornelius; TIGINYANU, Ion M. (Beilstein Institute for the Advancement of Chemical Sciences, Germany, 2020)
    A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and ...
  • Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films 
    MORARI, Vadim; PANTAZI, Aida; CURMEI, Nicolai; POSTOLACHE, Vitalie; RUSU, Emil V.; ENACHESCU, Marius; TIGINYANU, Ion M.; URSAKI, Veaceslav V. (Beilstein Institute for the Advancement of Chemical Sciences, Germany, 2020)
    A series of Zn1−xMgxO thin films with the composition range x = 0.00–0.40 has been prepared by sol–gel spin coating on Si substrates with a post-deposition thermal treatment in the temperature range of 400–650 °C. The ...
  • Effects of morphology on the emission of photons from GaN membranes fabricated using surface charge lithography 
    STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; POPA, V.; BRANISTE, T.; BRENNER, P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2013)
    Cathodoluminescence (CL) microanalysis has been used to investigate ultra-thin suspended GaN membranes fabricated from GaN epilayer surfaces by focused ion beam (FIB) pre-treatment and subsequent photoelectrochemical (PEC) ...
  • Characterization of p-NiO/n-Si heterojunctions prepared by spin coating method 
    MORARI, Vadim; ZALAMAI, Victor; RUSU, Emil; MONAICO, Eduard; URSAKI, Veacheslav; NIELSCH, Kornelius; TIGINYANU, Ion (Academia de Ştiinţe a Moldovei, 2019)
    In this paper, we present results on preparation of NiO thin films by spin-coating method. The films have been deposited on n-Si (100) substrates from 0.35 M aqueous solution of nickel chloride - NiCl2 *6H2 O or nickel ...

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