Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na/sub 2/SiO/sub 3/ solution interface

COJOCARU, A.; SHERBAN, D.; SIMASHKEVICH, A.; TIGINYANU, I.; TSIULYANU, I.; URSAKI, V.

Semiconductor-electrolyte junction at the n-GaAs (n-InP)/Na/sub 2/SiO/sub 3/ solution interface

COJOCARU, A.; SHERBAN, D.; SIMASHKEVICH, A.; TIGINYANU, I.; TSIULYANU, I.; URSAKI, V.

URI: https://doi.org/10.1109/SMICND.2002.1105884
http://repository.utm.md/handle/5014/11245

Date: 2002

Abstract:

The photoelectrochemical properties of the electrolyte-semiconductor interface in the chains formed by carbon auxiliary electrode-electrolyte-n-GaAs or n-InP semiconductors have been investigated. Besides bulk n-GaAs crystals also nanoporous n-GaAs material was used as a photoelectrode. Current-voltage characteristics in the dark and under illumination and spectral distribution of the photosensitivity were studied. The values of the photopotential reach 1V in the case of n-InP photoelectrode and 0.8V and 0.4V in the case of the nanoporous and bulk n-GaAs photoelectrode, respectively.