Impedance Spectroscopy as a Powerful Tool for Better Understanding and Controlling the Pore Growth Mechanism in Semiconductors

Abstract

This work shows new results towards a better understanding of macropore growth in semiconductor phenomenology by using in-situ FFT impedance spectroscopy. A new interpretation of the voltage impedance is proposed. In particular, the pore quality could be quantified for the first time in-situ, especially by extracting the valence of the electrochemical process. The study paves the way towards an automatized etching system where the pore etching parameters are adjusted in-situ during the pore etching process.