Characterization of p-NiO/n-Si heterojunctions prepared by spin coating method

Abstract

In this paper, we present results on preparation of NiO thin films by spin-coating method. The films have been deposited on n-Si (100) substrates from 0.35 M aqueous solution of nickel chloride - NiCl2 *6H2 O or nickel acetate - Ni(ac)2*4H2 O dissolved in 20 mL of 2-methoxyethanol + 0.5 mL of diethanolamine (DEA) as a stabilizer. The analysis of optical absorption spectra plotted in (αhυ)2 = f(hυ) coordinates for films deposited on silica substrates revealed a direct bandgap value of around 3.66 eV for p-NiO films.