Articole din publicaţii internaţionale: Recent submissions

  • Lasing with guided modes in ZnO nanorods and nanowires 
    ZALAMAI, V. V.; URSAKI, V. V.; KLINGSHIRN, C.; KALT, H.; EMELCHENKO, G. A.; REDKIN, A. N. (Springer Nature Switzerland, 2009)
    A vertically arranged nearly parallel array of ZnO nanorods and randomly oriented nanowires has been grown by low pressure chemical vapor deposition (CVD) on silica substrates and on stainless steel gauze woven from a wire ...
  • Photoconductive properties of HgGa2S4 
    RICCI, P. C.; ANEDDA, A.; CORPINO, R.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2003)
    Mercury thiogallate, HgGa2S4 is a defect chalcopyrite semiconductor with the space group S42 which offers a combination of attractive properties for applications. In order to obtain information about the electron states ...
  • Photoluminescence of ZnO layers grown on opals by chemical deposition from zinc nitrate solution 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (IOP Publishing, 2004)
    The emission from ZnO layers grown on the surface of bulk opals using chemical deposition is studied under excitation by the 351.1 nm line of an Ar+ laser at different excitation power densities and temperatures. The ...
  • Fabrication and photoluminescence properties of porous CdSe 
    TIGINYANU, I. M.; MONAICO, E.; URSAKI, V. V.; TEZLEVAN, V. E.; BOYD, Robert W. (Springer Nature Switzerland, 2005)
    We report the results of a study of the growth of pores in n-CdSen-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution ...
  • ZnO lasing in complex systems with tetrapods 
    MARKUSHEV, V. M.; URSAKI, V. V.; RYZHKOV, M. V.; BRISKINA, C. M.; TIGINYANU, I. M.; RUSU, E. V.; ZAKHIDOV, A. A. (Springer Nature Switzerland, 2008)
    ZnO structure in the form of a core–shell wire was grown with a modified vapour transport and condensation method. The wire consists of a dense core which may play the role of a waveguide and a shell formed mainly from ...
  • Exciton spectra, valence band splitting, and energy band structure of CuGaxIn1−xS2 and CuGaxIn1−xSe2 crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; NEMERENCO, L. L.; URSAKI, V. V.; TEZLEVAN, V. E.; ZALAMAI, V. V. (ELSEVIER, 2005)
    Exciton spectra are studied in CuGaXIn1−XS2 solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier ...
  • Order-disorder phase transition in CdAl2S4 under hydrostatic pressure 
    BURLAKOV, I. I.; RAPTIS, Y.; URSAKI, V. V.; ANASTASSAKIS, E.; TIGINYANU, I. M. (ELSEVIER, 1997)
    CdAl2S4 single crystals with the defect chalcopyrite structure have been studied by Raman spectroscopy at hydrostatic pressures up to 150 kbar. The Raman scattering spectra were found to undergo substantial changes around ...
  • Recombination in HgGaInS4 single crystals 
    ANEDDA, A.; CASU, M. B.; SERPI, A.; BURLAKOV, I. I.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 1997)
    Photoelectronic processes in HgGaInS4 have been studied by photoconductivity, thermally stimulated conductivity and photoluminescence. An exponential distribution of traps with a slope of 23 meV/decade as well as a further ...
  • Electronic structure of HgGa2S4 
    ATUCHIN, V. V.; KESLER, V. G.; URSAKI, V. V.; TEZLEVAN, V. E. (ELSEVIER, 2006)
    Transport method are investigated with X-ray photoemission spectroscopy. The valence band of HgGa2S4 is found to be formed by splitted S 3p and Hg 6s states at binding energies BE=3–7eV and the components at BE=7–11eV ...
  • Raman scattering study of pressure-induced phase transitions in MIn2S4 spinels 
    URSAKI, V. V.; MANJÓN, F. J.; TIGINYANU, I. M.; TEZLEVAN, V. E. (IOP Publishing, 2002)
    MIn2S4 (M = Mn, Cd, Mg spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. These compounds were found to undergo a reversible phase transition to a Raman-inactive defect ...
  • Lattice dynamics of ZnAl2O4 and ZnGa2O4 under high pressure 
    LÓPEZ-MORENO, S.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ROMERO, A. H.; MANJÓN, F. J.; ERRANDONEA, D.; RUSU, E.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work we present a first-principles density functional study of the vibrational properties of ZnAl2O4 and ZnGa2O4 as function of hydrostatic pressure. Based on our previous structural characterization of these two ...
  • Exciton polariton spectra and carrier effective masses in ZnO single crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V. (ELSEVIER, 2004)
    Photoreflectivity and photoluminescence spectra in the region of exciton resonance were measured in ZnO single crystals. A, B, and C exciton binding energies were determined from the energy position of the ground and excited ...
  • Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4 
    GRZECHNIK, A.; URSAKI, V. V.; SYASSEN, K.; LOA, I.; TIGINYANU, I. M.; HANFLAND, M. (ELSEVIER, 2001)
    The high-pressure behavior of semiconducting cadmium thiogallate CdGa2Se4 with the defect chalcopyrite structure (I4, Z=2) is studied by in situ angle-dispersive synchrotron X-ray powder diffraction and optical reflectivity ...
  • Surface-related phonon mode in porous GaP 
    TIGINYANU, I. M.; URSAKI, V. V.; KARAVANSKII, V. A.; SOKOLOV, V. N.; RAPTIS, Y. S.; ANASTASSAKIS, E. (ELSEVIER, 1996)
    Porous GaP layers prepared by electrochemical anodization of (1 0 0) and (1 1 1) A-oriented n-GaP crystalline substrates in HF solution have been studied by Raman spectroscopy. A surface vibrational mode at 397 cm−1 was ...
  • Photoluminescence and resonant Raman scattering from ZnO-opal structures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (American Institute of Physics, 2004)
    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission ...
  • Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation 
    URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; HUBBARD, S.; PAVLIDIS, D. (American Institute of Physics, 2003)
    Persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and ...
  • Phase transitions in defect chalcopyrite compounds under hydrostatic pressure 
    URSAKI, V. V.; BURLAKOV, I. I.; TIGINYANU, I. M.; RAPTIS, Y. S.; ANASTASSAKIS, E.; ANEDDA, A. (American Physical Society, 1999)
    Tetrahedrally bonded AGa2X4(A=Cd, Zn; X=S, Se) compounds crystallizing in defect chalcopyrite and defect famatinite structures have been studied by Raman spectroscopy under hydrostatic pressure. The pressure-induced changes ...
  • Post-spinel transformations and equation of state in ZnGa2O4: Determination at high pressure by in situ x-ray diffraction 
    ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; RUSU, E. V. (American Physical Society, 2009)
    Room temperature angle-dispersive x-ray diffraction measurements on spinel ZnGa2O4 up to 56 GPa show evidence of two structural phase transformations. At 31.2 GPa, ZnGa2O4 undergoes a transition from the cubic spinel ...
  • Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching 
    TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; LANGA, S.; HUBBARD, S.; PAVLIDIS, D.; FÖLL, H. (American Institute of Physics, 2003)
    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence ...
  • Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion 
    PHAN, The Long; VINCENT, Roger; CHERNS, David; NGHIA, Nguyen Xuan; URSAKI, V. V. (IOP Publishing, 2008)
    We have investigated normal and resonant Raman scattering in Me-doped ZnO nanorods (Me = Mn, Co, Cu and Ni) prepared by thermal diffusion. Experimental results show that the normal Raman spectra consist of the conventional ...

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