Browsing Articole ştiinţifice by Author "LANGA, S."

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  • Morphology and chemical composition microanalysis of 2D and 3D ordered structures on porous InP 
    LANGA, S.; SIRBU, L.; MONAICO, E.; CARSTENSEN, J.; FÖLL, H.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Porous InP proves to be promising for use in nanotechnologies due to the possibility to fabricate ordered structures like two-dimensional (2D) single crystals of nanopores. The main goal of this paper is to demonstrate ...
  • A Novel Electrostatic Actuator Class 
    CONRAD, H.; KAISER, B.; GAUDET, M.; LANGA, S.; STOLZ, M.; UHLIG, S.; SCHIMMANZ, K.; SCHENK, H. (ELSEVIER, 2016)
    Common quasi-static electrostatic micro actuators have significant limitations in deflection due to electrode separation and unstable drive regions. These actuators suffer from an operational instability, the so-called ...
  • Nucleation and growth of macro pores on (100) n-type Ge 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    The authors investigate the nucleation and growth of macro pores on n-type Ge in the dark and with back side illumination. We show that nucleation on Ge is strongly dependent on the surface defect structure and therefore ...
  • Observation of crossing pores in anodically etched n-GaAs 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H.; TIGINYANU, I. M. (American Institute of Physics, 2001)
    Pores in GaAs in the micrometer range and oriented in |111| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very ...
  • Open-loop-control of pore formation in semiconductor etching 
    CLAUSSEN, J. C.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; LANGA, S.; FOLL, H. (IEEE, 2003)
    Electrochemical etching of semiconductors gives rise to a wide variety of self-organized structures including fractal structures, regular and branching pores. The Current-Burst Model and the Aging Concept are considered ...
  • Photoluminescence mechanisms of Tb3+ - doped porous GaP 
    ELHOUICHET, H.; OUESLATI, M.; LORRAIN, N.; LANGA, S.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    Porous GaP (por-GaP) samples are doped with terbium ions (Tb3+) by simple impregnation followed by high-temperature annealing. From scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis, we show ...
  • Pores in III–V semiconductors 
    FÖLL, H.; LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of ...
  • Porous II-VI vs. porous III-V semiconductors 
    LANGA, S.; TIGINYANU, I. M.; MONAICO, E.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented. It is shown that in III-V semiconductors ...
  • Porous III–V compound semiconductors: formation, properties, and comparison to silicon 
    FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited ...
  • Porous III–V compounds as nonlinear optical materials 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; LANGA, S.; MAROWSKY, G.; MONECKE, J.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that under defined etching conditions uniformly distributed pores ...
  • Porous morphologies in Si, III-V and II-VI compounds: a comparative study 
    LANGA, S.; MONAICO, E.; FÖLL, H.; TIGINYANU, I. M. (Technical University of Moldova, 2009)
    Porous morphologies obtained during the anodization of semiconductors are mainly determined by particular characteristics of the semiconductor-electrolyte interfaces and the bulk properties of the semiconductor itself. ...
  • Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds 
    TIGINYANU, I. M.; LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; SERGENTU, V.; FOCA, E.; RIOS, O.; FÖLL, H. (Cambridge University Press, 2001)
    Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds (GaAs, InP, GaP) by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore ...
  • Room temperature bonding for vacuum applications: climatic and long time tests 
    LANGA, S.; UTSUMI, J.; LUDEWIG, T.; DRABE, C. (Springer Nature Switzerland, 2013)
    A detailed and quantitative motivation for the necessity of room temperature (RT) bonding for wafer level packaging of silicon micro-mirrors will be given. Results on RT 6 inch wafer bonding with vacuum encapsulation on ...
  • Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2001)
    Voltage oscillations were observed during anodic etching of (100)-oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous ...
  • Self-organized growth of single crystals of nanopores 
    LANGA, S.; TIGINYANU, I. M.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H. (American Institute of Physics, 2003)
    Self-organized single crystalline two-dimensional hexagonal arrays of pores in InP semiconductor compound are reported. We show that the self-arrangement of pores can be obtained on n-type substrates with (100) and (111) ...
  • Selforganized formation of crystallographically oriented octahedral cavities during electrochemical pore etching 
    LÖLKES, S.; CHRISTOPHERSEN, M.; LANGA, S.; CARSTENSEN, J.; FÖLL, H. (ELSEVIER, 2003)
    The parameter dependence of electrochemically etched pores in silicon is studied. Using HF containing organic electrolytes and backside illumination on moderately doped silicon, macropores and octahedrally shaped pores can ...
  • Single crystalline 2D porous arrays obtained by self organization in n-Inp 
    LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage ...
  • Strong visible emission from porous GaP doped with Eu and Tb ions 
    ELHOUICHET, H.; DABOUSSI, S.; AJLANI, H.; NAJAR, A.; MOADHEN, A.; OUESLATI, M.; TIGINYANU, I. M.; LANGA, S.; FÖLL, H. (ELSEVIER, 2005)
    We demonstrate strong room-temperature photoluminescence (PL) in the visible region of the spectrum from europium (Eu3+)-doped porous GaP (por-GaP) layers. Eu3+ ions were infiltrated into the host matrix by simple impregnation ...
  • Technological aspects of a new micro-electro-mechanical actuation principle: nano-e-drive 
    LANGA, S.; CONRAD, H.; KAISER, B.; STOLZ, M.; GAUDET, M.; UHLIG, S.; SCHIMMANZ, K.; SCHENK, H. (Springer Nature Switzerland, 2003)
    This paper presents the technological aspects of a newly demonstrated actuation principle, the so-called nano-e-drive. Using this principle, cantilevers can be moved in or out of chip plane. In this paper, only the ...
  • Uniform and Nonuniform Nucleation of Pores during the Anodization of Si, Ge, and III-V Semiconductors 
    LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; STEEN, K.; FREY, S.; TIGINYANU, I. M.; FÖLL, H. (The Electrochemical Society, Inc., 2005)
    Morphology is one of the basic characteristics of porous layers. For electrochemically grown pores, morphology is strongly dependent on the starting phase of pore growth, the so-called nucleation phase. This paper addresses ...

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