Open-loop-control of pore formation in semiconductor etching

Abstract

Electrochemical etching of semiconductors gives rise to a wide variety of self-organized structures including fractal structures, regular and branching pores. The Current-Burst Model and the Aging Concept are considered to describe the dynamical behavior governing the structure formation. Here the suppression of side-branching during pore growth is demonstrated by an open-loop-control method, resulting in pores with oscillating diameter.