Observation of crossing pores in anodically etched n-GaAs

Abstract

Pores in GaAs in the micrometer range and oriented in |111| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro- and nanostructuring of III–V compounds for the production of photonic materials.