Recombination in HgGaInS4 single crystals

ANEDDA, A.; CASU, M. B.; SERPI, A.; BURLAKOV, I. I.; TIGINYANU, I. M.; URSAKI, V. V.

Recombination in HgGaInS4 single crystals

ANEDDA, A.; CASU, M. B.; SERPI, A.; BURLAKOV, I. I.; TIGINYANU, I. M.; URSAKI, V. V.

URI: https://doi.org/10.1016/S0022-3697(96)00124-2
http://repository.utm.md/handle/5014/11305

Date: 1997

Abstract:

Photoelectronic processes in HgGaInS4 have been studied by photoconductivity, thermally stimulated conductivity and photoluminescence. An exponential distribution of traps with a slope of 23 meV/decade as well as a further electron trap system with an activation energy of 70 meV have been localized below the bottom of the conduction band. Radiative electron transitions are shown to occur mainly from exponentially distributed traps to an acceptor level characterized by an activation energy of 220 meV.