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Browsing Articole din publicaţii internaţionale by Subject "electrochemical etching"

Browsing Articole din publicaţii internaţionale by Subject "electrochemical etching"

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  • Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP 
    SÁNCHEZ, B.; MÉNDEZ, B.; PIQUERAS, J.; SIRBU, L.; TIGINYANU, I. M.; URSAKI, V. V. (Springer Nature Switzerland, 2008)
    Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial ...
  • Electrochemical pore etching in Ge – An overview 
    FANG, C.; FÖLL, H.; CARSTENSEN, J.; LANGA, S. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2007)
    While electrochemical pore etching in semiconductors has become a thriving field for research (and applications) in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a ...
  • Enhanced Emission Properties of Anodized Polar ZnO Crystals 
    ZALAMAI, V. V.; COLIBABA, G. V.; MONAICO, E. I.; MONAICO, E. V. (Springer Nature Switzerland, 2021)
    Polar ZnO single crystals were microstructured in a controlled fashion by electrochemical etching. Surfaces with pyramids and inversed pyramids on oxygen and zinc faces, respectively, were received. Photoluminescence spectra ...
  • Fabrication of diameter modulated gallium arsenide nanowires via anodization 
    MONAICO, E. I. (Белорусский Государственный Университет, 2022)
    In this paper, the technological approach for diameter modulated GaAs nanowires fabrication via electrochemical etching representing simple and cost-effective technology is demonstrated. At optimized applied potential, in ...
  • Fabrication, characterization, and applications of high-performance AlGaAs-based buried-heterostructure diode lasers 
    SYRBU, Alexei V.; MEREUTZA, Alexandru Z.; SURUCEANU, Grigore I.; IACOVLEV, Vladimir P.; CALIMAN, Andrei N.; LUPU, Anatol T.; VIERU, Stanislav T.; PREDESCU, Marius; POPESCU, Ion M.; ISPASOIU, Radu G. (SPIE, 1996)
    Data are presented on buried-heterostructure (BH) AlGaAs/ GaAs and InGaAs/AlGaAs quantum-well diode lasers (DLs) fabricated by low-temperature liquid phase mesa melt etching and regrowth. The basic laser structures were ...
  • Formation of Tetrahedron-Like Pores during Anodic Etching of (100) Oriented n-GaAs 
    LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H. (The Electrochemical Society, 2002)
    The morphology of porous layers obtained by electrochemical etching of (100) oriented n-GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities, up to 5 mA/cm2, pores in the form of ...
  • Fröhlich modes in porous III-V semiconductors 
    SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)
    Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...
  • Gold Electroplating as a Tool for Assessing the Conductivity of InP Nanostructures Fabricated by Anodic Etching of Crystalline Substrates 
    MONAICO, E. V.; TIGINYANU, I. M.; URSAKI, V. V.; NIELSCH, K.; BALAN, D.; PRODANA, M.; ENACHESCU, M. (The Electrochemical Society, 2017)
    Electroplating is shown to represent a simple and effective tool for assessing the conductivity of InP nanostructures fabricated by electrochemical etching of InP wafers. A mixture of nanowalls, nanowires and nanobelts was ...
  • Impedance Spectroscopy as a Powerful Tool for Better Understanding and Controlling the Pore Growth Mechanism in Semiconductors 
    COJOCARU, A.; FOCA, E.; CARSTENSEN, J.; LEISNER, M.; TIGINYANU, I. M.; FÖLL, H. (Springer, Berlin, Heidelberg, 2009)
    This work shows new results towards a better understanding of macropore growth in semiconductor phenomenology by using in-situ FFT impedance spectroscopy. A new interpretation of the voltage impedance is proposed. In ...
  • Large area etching for porous semiconductors 
    CARSTENSEN, J.; CHRISTOPHERSEN, M.; LÖLKES, S.; OSSEI-WUSU, E.; BAHR, J.; LANGA, S.; POPKIROV, G.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2005)
    While electrochemical etching of small samples in the 1 cm region is relatively easy, this is not true for large areas, i.e. standard wafer sizes up to 300 mm. The paper outlines the specific demands and difficulties in ...
  • Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications 
    BRANISTE, T.; CIERS, Joachim; MONAICO, Ed.; MARTIN, D.; CARLIN, J.-F.; URSAKI, V. V.; SERGENTU, V. V.; TIGINYANU, I. M.; GRANDJEAN, N. (ELSEVIER, 2017)
    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) ...
  • Multilayer porous structures on GaN for the fabrication of Bragg reflectors 
    BRANISTE, Tudor; MONAICO, Eduard; MARTIN, Denis; CARLIN, Jean-François; POPA, Veaceslav; URSAKI, Veaceslav V.; GRANDJEAN, Nicolas; TIGINYANU, Ion M. (Society of Photo-Optical Instrumentation Engineers, SPIE, 2017)
    We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride ...
  • Multilayer porous structures on GaN for the fabrication of Bragg reflectors 
    BRANISTE, Tudor; MONAICO, Eduard; MARTIN, Denis; CARLIN, Jean-François; POPA, Veaceslav; URSAKI, Veaceslav V.; GRANDJEAN, Nicolas; TIGINYANU, Ion M. (SPIE, 2017)
    We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride ...
  • Nanostructured Film of Indium Phosphide as Biosensor in 1D Array Electrowetting System 
    SIRBU, Lilian; VODĂ, Irina; ESINENCO, Dorin; GANGAN, Sergiu; MULLER, Raluca; VOICU, Rodica Cristina; DǍNILǍ, Mihai; GHIMPU, Lidia; TIGINYANU, Ion; URSAKI, Veacheslav (Romanian Academy Publishing House, 2011)
    We demonstrated the fabrication of complex nanostructured InP membranes with porous compact packed structure that have been cut during electrochemical etching in the same anodic process. The membranes were filled with ...
  • Nanostructured indium phosphide used in electrowetting system for biosensor applications 
    SIRBU, L.; VODA, I.; ESINENCO, D.; MULLER, R.; VOICU, R.; DANILA, M.; GHIMPU, L.; TIGINYANU, I. M.; URSAKI, V. (IEEE, 2011)
    We demonstrated the fabrication of complex nanostructured InP membranes with porous compact packed structure that have been cut during electrochemical etching in the same anodic process. The membranes were filled with ...
  • Open-loop-control of pore formation in semiconductor etching 
    CLAUSSEN, J. C.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; LANGA, S.; FOLL, H. (IEEE, 2003)
    Electrochemical etching of semiconductors gives rise to a wide variety of self-organized structures including fractal structures, regular and branching pores. The Current-Burst Model and the Aging Concept are considered ...
  • Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane 
    STEELE, J. A.; LEWIS, R. A.; SIRBU, L.; ENACHI, M.; TIGINYANU, I. M.; SKURATOV, V. A. (IOP Publishing, 2015)
    High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was ...
  • Photoluminescence and vibrational properties of nanostructured ZnSe templates 
    MONAICO, E.; TIGINYANU, I. M.; URSAKI, V. V.; SARUA, A.; KUBALL, M.; NEDEOGLO, D. D.; SIRKELI, V. P. (IOP Publishing, 2007)
    Electrochemical etching of pores in as-grown and doped n-type ZnSe substrates is reported. To dope the samples the as-grown semi-insulating substrates were annealed in a Zn melt containing Al impurity at concentrations ...
  • Porous II-VI vs. porous III-V semiconductors 
    LANGA, S.; TIGINYANU, I. M.; MONAICO, E.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented. It is shown that in III-V semiconductors ...
  • Porous III–V compounds as nonlinear optical materials 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; LANGA, S.; MAROWSKY, G.; MONECKE, J.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that under defined etching conditions uniformly distributed pores ...

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