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Browsing Articole din publicaţii internaţionale by Author "URSAKI, V. V."

Browsing Articole din publicaţii internaţionale by Author "URSAKI, V. V."

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  • GaAs nanowires obtained via electrochemical etching of bulk substrates 
    MONAICO, Ed.; MORARI, V.; URSAKI, V. V.; MONAICO, E. I.; TIGINYANU, I. M.; NIELSCH, K. (Institutul de Fizică Aplicată, AŞM, 2018)
    Technological conditions for obtaining InP nanomembranes and nanowires by means of fast anodic etching of bulk substrates have been recently elaborated. Electrochemical etching is an easy, cost-effective, and very fast ...
  • GaN Schottky multiplier diodes prepared by electroplating: a study of passivation technology 
    COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; HARTNAGEL, H. L.; DAUMILLER, I. (IOP Publishing, 2004)
    This paper presents the results of a Pt/n-GaN Schottky contact technology development based on electrochemical metal deposition. Three different technological approaches are used to fabricate GaN varactor diodes. The effects ...
  • A GaN-based two-sensor array for methane detection in an ethanol environment 
    POPA, V.; TIGINYANU, I. M.; URSAKI, V. V.; VOLCIUS, O.; MORKOÇ, H. (IOP Publishing, 2006)
    We demonstrate that photoelectrochemical (PEC) etching of GaN layers in KOH or H3PO4 solutions leads to the formation of specific surface morphologies which cause the material to exhibit different sensitivities to certain ...
  • GaP template based semiconductor-metal nanocomposite 
    ALBU, Sergiu; MONAICO, Eduard; TIGINYANU, I. M.; URSAKI, V. V. (Institutul de Fizică Aplicată, AŞM, 2006)
    The interest in nanometer-scale materials and devices stimulated the development of alternative technologies in recent years. Metal nanowires are one of the most attractive materials because of their unique properties ...
  • Gold Electroplating as a Tool for Assessing the Conductivity of InP Nanostructures Fabricated by Anodic Etching of Crystalline Substrates 
    MONAICO, E. V.; TIGINYANU, I. M.; URSAKI, V. V.; NIELSCH, K.; BALAN, D.; PRODANA, M.; ENACHESCU, M. (The Electrochemical Society, 2017)
    Electroplating is shown to represent a simple and effective tool for assessing the conductivity of InP nanostructures fabricated by electrochemical etching of InP wafers. A mixture of nanowalls, nanowires and nanobelts was ...
  • Guided mode lasing in ZnO nanorod structures 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; FALLERT, J.; KLINGSHIRN, C.; KALT, H.; EMELCHENKO, G. A.; REDKIN, A. N.; GRUZINTSEV, A. N.; RUSU, E. V.; TIGINYANU, I. M. (ELSEVIER, 2009)
    Quasi-two-dimensional arrays of nearly parallel hexagonal ZnO nanorods and a three-dimensional cylindrical microstructure consisting of ZnO nanorods have been grown by low pressure chemical vapor deposition (CVD) and ...
  • HgGa2Se4 under high pressure: An optical absorption study 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; RUIZ-FUERTES, J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; BANDIELLO, E.; ERRANDONEA, D.; SEGURA, A.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2015)
    High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order–disorder ...
  • High-pressure effects on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels 
    RUIZ-FUERTES, J.; ERRANDONEA, D.; MANJÓN, F. J.; MARTÍNEZ-GARCÍA, D.; SEGURA, A.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)
    The effect of pressure on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature is investigated up to 20 GPa. The pressure dependence of their band-gaps has been analyzed using the ...
  • High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; SANTAMARÍA-PÉREZ, D.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2012)
    High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
  • High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 
    VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
  • High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4 
    GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; SANTAMARÍA-PÉREZ, D.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB2X4 ordered-vacancy compounds with tetragonal defect chalcopyrite ...
  • High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4 
    ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)
    X-ray diffraction measurements on the sphalerite-derivatives ZnGa2Se4ZnGa2Se4 and CdGa2S4CdGa2S4 have been performed upon compression up to 23 GPa in a diamond-anvil cell. ZnGa2Se4ZnGa2Se4 exhibits a defect tetragonal ...
  • Highly luminescent columnar ZnO films grown directly on n-Si and p-Si substrates by low-temperature electrochemical deposition 
    LUPAN, Oleg; PAUPORTÉ, Thierry; URSAKI, V. V.; TIGINYANU, I. M. (ELSEVIER, 2011)
    In this study, nanocolumnar zinc oxide thin films were catalyst-free electrodeposited directly on n-Si and p-Si substrates, what makes an important junction for optoelectronic devices. We demonstrate that ZnO thin films ...
  • The impact of morphology upon the radiation hardness of ZnO layers 
    BURLACU, A.; URSAKI, V. V.; SKURATOV, V. A.; LINCOT, D.; PAUPORTE, T.; ELBELGHITI, H.; RUSU, E. V.; TIGINYANU, I. M. (IOP Publishing, 2008)
    It is shown that ZnO nanorods and nanodots grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 ...
  • Impact of size upon lasing in ZnO microtetrapods 
    ZALAMAI, V. V.; URSAKI, V. V.; TIGINYANU, I. M.; BURLACU, A.; RUSU, E. V.; KLINGSHIRN, C.; FALLERT, J.; SARTOR, J.; KALT, H. (Springer Nature Switzerland, 2010)
    High optical quality, well end leg faceted ZnO microtetrapods with leg length between 1 and 12 μm have been grown by carbothermal chemical vapor deposition. Lasing with mode quality factors of 2500–3000 is demonstrated. ...
  • Improvement of InP crystalline perfection by He+-implantation and subsequent annealing 
    TIGINYANU, I. M.; TERLETSKY, A. I.; URSAKI, V. V. (ELSEVIER, 1995)
    The influence has been studied of 100-keV He+-ion implantation and subsequent thermal annealing on Raman scattering spectra of LEC-grown InP single crystals with (100)- and (111)-crystallographic orientations of the surface. ...
  • Impurity centers in ZnSe:Na crystals 
    COLIBABA, G. V.; NEDEOGLO, D. D.; URSAKI, V. V. (ELSEVIER, 2011)
    The influence of sodium impurity on photoluminescence (PL) spectra of ZnSe crystals doped in a growth process from a Se+Na melt is investigated. It is shown that the introduction of the impurity results in emergence of ...
  • The influence of isochronous annealing upon the near-band-edge photoluminescence spectra of the electron-irradiated n-InP 
    RADAUTSAN, S. I.; TIGINYANU, I. M.; URSAKI, V. V.; KORSHUNOV, F. P.; SOBOLEV, N. A.; KUDRYAVTSEVA, E. A. (ELSEVIER, 1993)
    The near-band-edge photoluminescence (PL) bands observed at 1.305 and 1.392 eV (T = 4.2 K) in electron-irradiated InP single crystals and epilayers have different behaviour with increasing temperature of isochronous ...
  • Injection photodiode based on an Al–p-Si–n-Zn85Mg15O–n-Zn65Mg35O–Ag structure 
    MORARI, V.; RUSU, E. V.; POSTOLACHE, V.; URSAKI, V. V.; TIGINYANU, I. M.; ROGACHEV, A. V.; SEMCHENKO, A. V. (Publishing House of the Romanian Academy, 2021)
    A series of Zn1−xMgxO thin films with the composition range x = 0.00–0.60 has been prepared by aerosol spray pyrolysis deposition on Si or quartz substrates. The morphology, composition, crystals structure, and optical ...
  • Intense luminescence from porous ZnSe layers 
    MONAICO, Eduard; UBRIETA, A.; FERNANDEZ, P.; PIQUERAS, J.; TIGINYANU, I. M.; URSAKI, V. V.; BOYD, Robert W. (Institutul de Fizică Aplicată, AŞM, 2006)
    The porous form of III-V semiconductors was extensively studied during the last decade. Porosity enhanced phenomena such as optical second harmonic generation and Terahertz emission have been reported. Porosity induced ...

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