Abstract:
The influence has been studied of 100-keV He+-ion implantation and subsequent thermal annealing on Raman scattering spectra of LEC-grown InP single crystals with (100)- and (111)-crystallographic orientations of the surface. Improvement of InP crystalline perfection was observed after He+-implantation at the dose 1 × 1015cm−2 followed by sample annealing at 600–700°C. Implant-induced removal of thermally stable defect clusters related with the growth process is supposed to be primarily responsible for the phenomenon involved.
