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Showing 10 out of a total of 162 results for community: Articole ştiinţifice.
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Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP
RUSU, E. V.
;
SLOBODCHIKOV, S. V.
;
SALIKHOV, H. M.
;
TURCU, M.
(
IEEE
,
1998
)
Speed and efficiency of the PIN homojunction photodiodes on InGaAs/InP heterostructures
BUDIANU, E.
;
PURICA, M.
;
RUSU, E.
;
NAN, S.
(
IEEE
,
1998
)
Structural and optoelectrical investigation of transparent and conductive ZnO thin films prepared by chemical vapor deposition
PURICA, M.
;
BUDIANU, E.
;
RUSU, E.
;
DANILA, M.
;
GAVRILA, R.
(
IEEE
,
1998
)
ZnO thin film optical window as partner for photodetecting heterostructures on Si and InP
BUDIANU, E.
;
PURICA, M.
;
GAVRILA, R.
;
NASTASE, S.
;
RUSU, E.
;
SLOBODCHIKOV, S. V.
;
TURCU, M.
(
IEEE
,
1999
)
Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors
RUSU, E.
;
BUDIANU, E.
;
NAN, S.
;
PURICA, M.
(
IEEE
,
1996
)
ZnO/InP thin film heterojunction for photovoltaic applications
PURICA, M.
;
RUSU, E.
;
BUDIANU, E.
;
NAN, S.
(
IEEE
,
1998
)
A new propylamine sensor using artificial dimorphite
TSIULYANU, D.
;
MARIAN, S.
;
GUBA, M.
;
POTJE-KAMLOTH, K.
;
LIESS, H.-D.
(
IEEE
,
1998
)
Absorption edge and dispersion of the refractive index of arsenic-sulfur-germanium layers with an increased sulfur concentration
TSIULYANU, D. I.
;
GUMENYUK, N. A.
(
Springer Nature Switzerland
,
1990
)
Анодный электродный процесс в халькогенидных стеклообразных полупроводниках, стимулированный внешними воздействиями
АНДРИЕШ, А. М.
;
НЕФЕДОВ, В. Я .
;
ЦИУЛЯНУ, Д. Я .
;
СОКОЛОВ, А. Н.
;
ТРИДУХ, Г. М.
;
ГРИНШПУН, Л. Б.
(
Ioffe Institute, RAS
,
1990
)
Optical absorption and thermal expansion of semiconductor glasses As-S-Ge by topological transition
TSIULYANU, D.
;
GUMENYUK, N.
;
MARIAN, S.
(
Society of Photo-Optical Instrumentation Engineers, SPIE
,
1995
)
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SYRBU, N. N. (28)
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