Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors

RUSU, E.; BUDIANU, E.; NAN, S.; PURICA, M.

Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors

RUSU, E.; BUDIANU, E.; NAN, S.; PURICA, M.

URI: https://doi.org/10.1109/SMICND.1996.557344
http://repository.utm.md/handle/5014/12436

Date: 1996

Abstract:

The Schottky barriers of Ag, Ti, Ni, on n and p iso-type heterostructures of In/sub 0.53/Ga/sub 0.47/As/InP, grown by the CL-VPE technique, have shown that values of 0.6 eV for Ag/p-InGaAs barrier height and of 0.46 eV on n-InGaAs, by growing an n-InP interlayer may be obtained.