New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis

ARSENTIEV, I.; BOLTOVETS, N.; BOBYL, A.; IVANOV, V.; KONAKOVA, R.; KUDRYK, Ya.; LYTVYN, O.; MILENIN, V.; TARASOV, I.; BELYAEV, A.; RUSU, Emil

New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis

ARSENTIEV, I.; BOLTOVETS, N.; BOBYL, A.; IVANOV, V.; KONAKOVA, R.; KUDRYK, Ya.; LYTVYN, O.; MILENIN, V.; TARASOV, I.; BELYAEV, A.; RUSU, Emil

URI: http://repository.utm.md/handle/5014/12067

Date: 2005

Abstract:

A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of epitaxial layers grown on porous n -InP substrates and barrier structures on their basis are demonstrated.

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