New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis

ARSENTIEV, I.; BOLTOVETS, N.; BOBYL, A.; IVANOV, V.; KONAKOVA, R.; KUDRYK, Ya.; LYTVYN, O.; MILENIN, V.; TARASOV, I.; BELYAEV, A.; RUSU, Emil

dc.contributor.author	ARSENTIEV, I.
dc.contributor.author	BOLTOVETS, N.
dc.contributor.author	BOBYL, A.
dc.contributor.author	IVANOV, V.
dc.contributor.author	KONAKOVA, R.
dc.contributor.author	KUDRYK, Ya.
dc.contributor.author	LYTVYN, O.
dc.contributor.author	MILENIN, V.
dc.contributor.author	TARASOV, I.
dc.contributor.author	BELYAEV, A.
dc.contributor.author	RUSU, Emil
dc.date.accessioned	2020-12-11T09:25:28Z
dc.date.available	2020-12-11T09:25:28Z
dc.date.issued	2005
dc.identifier.citation	ARSENTIEV, I., BOLTOVETS, N., BOBYL, A. et al. New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis. In: Moldavian Journal of the Physical Sciences. 2005, nr. 4(4), pp. 481-484. ISSN 1810-648X.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/12067
dc.description.abstract	A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of epitaxial layers grown on porous n -InP substrates and barrier structures on their basis are demonstrated.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu"	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	surface morphology	en_US
dc.subject	epitaxial layers	en_US
dc.subject	Schottky diodes	en_US
dc.title	New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis	en_US
dc.type	Article	en_US