Topological insulator Bi2Te3 layers, transport and thermoelectric properties

Abstract

We have investigated thermoelectric properties and Shubnikov de Haas (SdH) oscillations in topological insulator (TI) Bi2Te3 layers. TI are electronic materials that have a bulk band gap like an ordinary insulator but have protected conduction state on their edge of surface. These states are possible due to the combination as spin- orbit interactions and time- reversal symmetry. It has been predicted theoretically that thermoelectric figure of merit 𝑍𝑇 = 𝛼2𝜎 𝜒 𝑇 can be strongly enhanced in Bi2Te3 thin films TI.