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Topological insulator Bi2Te3 layers, transport and thermoelectric properties

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dc.contributor.author NIKOLAEVA, A. A.
dc.contributor.author KONOPKO, L. A.
dc.contributor.author ROGACKI, K.
dc.contributor.author RUSU, A.
dc.contributor.author GRITSKO, R.
dc.date.accessioned 2020-09-09T08:45:58Z
dc.date.available 2020-09-09T08:45:58Z
dc.date.issued 2016
dc.identifier.citation NIKOLAEVA, A. A., KONOPKO, L. A., ROGACKI, K., RUSU, A., GRITSKO, R. Topological insulator Bi2Te3 layers, transport and thermoelectric properties. In: Materials Science and Condensed Matter Physics : proc. of the 8th intern. conf. Sept. 12-16 2016, Chişinău, 2016, p. 261. ISBN 978-9975-9787-1-2. en_US
dc.identifier.isbn 978-9975-9787-1-2
dc.identifier.uri http://repository.utm.md/handle/5014/9316
dc.description Sursa: Conferința – "International Conference on Materials Science and Condensed Matter Physics", 8-th Edition Chişinău, Moldova, 12-16 septembrie 2016.→ https://ibn.idsi.md/collection_view/143 en_US
dc.description.abstract We have investigated thermoelectric properties and Shubnikov de Haas (SdH) oscillations in topological insulator (TI) Bi2Te3 layers. TI are electronic materials that have a bulk band gap like an ordinary insulator but have protected conduction state on their edge of surface. These states are possible due to the combination as spin- orbit interactions and time- reversal symmetry. It has been predicted theoretically that thermoelectric figure of merit 𝑍𝑇 = 𝛼2𝜎 𝜒 𝑇 can be strongly enhanced in Bi2Te3 thin films TI. en_US
dc.language.iso en en_US
dc.publisher Institutul de Fizică Aplicată en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject thermoelectric properties en_US
dc.subject Shubnikov de Haas (SdH) oscillations en_US
dc.subject topological insulator en_US
dc.title Topological insulator Bi2Te3 layers, transport and thermoelectric properties en_US
dc.type Article en_US


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