Photoelectric and electrical properties of heterojunctions on cadmium tetraphosphide with zinc oxide

Abstract

Active structures on anisotropic crystals with large birefringence and semiconductor properties make it possible to solve a number of problems of polarization optoelectronics and simultaneously to study the properties of the materials. The latter is especially important in the absence of comparatively simple methods for inversion of the sign of the semiconductor conductivity for the production of n-junctions, Schottky barriers, for example, in the case of cadmium tetra- phosphide and zinc diarsenide, a change in their conductivity from hole to electron.