Photoelectric and electrical properties of heterojunctions on cadmium tetraphosphide with zinc oxide

STAMOV, I. G.; TKACHENKO, D. V.; SYRBU, N.N.

dc.contributor.author	STAMOV, I. G.
dc.contributor.author	TKACHENKO, D. V.
dc.contributor.author	SYRBU, N.N.
dc.date.accessioned	2020-09-08T08:28:36Z
dc.date.available	2020-09-08T08:28:36Z
dc.date.issued	2018
dc.identifier.citation	STAMOV, I. G., TKACHENKO, D. V., SYRBU, N. N. Photoelectric and electrical properties of heterojunctions on cadmium tetraphosphide with zinc oxide. In: Materials Science and Condensed Matter Physics : proc. of the 9th intern. conf. Sept. 25-28, 2018, Chişinău, 2018, p. 197.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/9286
dc.description	Sursa: Conferința – "International Conference on Materials Science and Condensed Matter Physics", 9-th Edition Chişinău, Moldova, 25-28 septembrie 2018.→ https://ibn.idsi.md/collection_view/135	en_US
dc.description.abstract	Active structures on anisotropic crystals with large birefringence and semiconductor properties make it possible to solve a number of problems of polarization optoelectronics and simultaneously to study the properties of the materials. The latter is especially important in the absence of comparatively simple methods for inversion of the sign of the semiconductor conductivity for the production of n-junctions, Schottky barriers, for example, in the case of cadmium tetra- phosphide and zinc diarsenide, a change in their conductivity from hole to electron.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Fizică Aplicată, AŞM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	heterojunctions	en_US
dc.subject	crystals	en_US
dc.subject	optoelectronics	en_US
dc.title	Photoelectric and electrical properties of heterojunctions on cadmium tetraphosphide with zinc oxide	en_US
dc.type	Article	en_US