Excitonic states and electron transitions in HgGa2Se4 single crystals

Abstract

The HgGa2Se4 crystals were grown by gas-transport method in ampoules and were plates with mirrored surfaces ~ 5x7 mm and 2 - 6 mm thickness. The plate‘s surfaces were parallel with c axis and could be recognized visually. Low-temperature spectra of crystals deposed in closed helium LTS-22 C 330 optical cryogenic system were measured on MDR-2 spectrometer with optical efficiency 1:2 and linear dispersion 7 Ǻ/mm. The measurements of resonance Raman scattering and photoluminescence were carried out by help of spectrometer DFS-32 with optical efficiency 1:5 and linear dispersion 5 Ǻ/mm.