Excitonic states and electron transitions in HgGa2Se4 single crystals

ZALAMAI, V. V.; SYRBU, N .N.; TIRON, A. V.

dc.contributor.author	ZALAMAI, V. V.
dc.contributor.author	SYRBU, N .N.
dc.contributor.author	TIRON, A. V.
dc.date.accessioned	2020-09-07T10:16:11Z
dc.date.available	2020-09-07T10:16:11Z
dc.date.issued	2018
dc.identifier.citation	V. V. ZALAMAI, N. N. SYRBU, A. V. TIRON. Excitonic states and electron transitions in HgGa2Se4 SINGLE crystals. In: Materials Science and Condensed Matter Physics : proc. of the 9th intern. conf. Sept. 25-28, 2018, Chişinău, 2018, p. 103.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/9242
dc.description	Sursa: Conferința – "International Conference on Materials Science and Condensed Matter Physics", 9-th Edition Chişinău, Moldova, 25-28 septembrie 2018.→ https://ibn.idsi.md/collection_view/135	en_US
dc.description.abstract	The HgGa2Se4 crystals were grown by gas-transport method in ampoules and were plates with mirrored surfaces ~ 5x7 mm and 2 - 6 mm thickness. The plate‘s surfaces were parallel with c axis and could be recognized visually. Low-temperature spectra of crystals deposed in closed helium LTS-22 C 330 optical cryogenic system were measured on MDR-2 spectrometer with optical efficiency 1:2 and linear dispersion 7 Ǻ/mm. The measurements of resonance Raman scattering and photoluminescence were carried out by help of spectrometer DFS-32 with optical efficiency 1:5 and linear dispersion 5 Ǻ/mm.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Fizică Aplicată, AŞM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	single crystals	en_US
dc.title	Excitonic states and electron transitions in HgGa2Se4 single crystals	en_US
dc.type	Article	en_US