Observation of crossing pores in anodically etched n-GaAs

LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; FÖLL, H.; TIGINYANU, I. M.

dc.contributor.author	LANGA, S.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	FÖLL, H.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-09-01T10:39:47Z
dc.date.available	2020-09-01T10:39:47Z
dc.date.issued	2001
dc.identifier.citation	LANGA, S., CARSTENSEN, J., CHRISTOPHERSEN, M. et al. Observation of crossing pores in anodically etched n-GaAs. In: Applied Physics Letters. 2001, V. 78, Nr. 8, pp. 1074-1076. ISSN 0003-6951.	en_US
dc.identifier.issn	0003-6951
dc.identifier.uri	https://doi.org/10.1063/1.1350433
dc.identifier.uri	http://repository.utm.md/handle/5014/9146
dc.description	Access full text - https://doi.org/10.1063/1.1350433	en_US
dc.description.abstract	Pores in GaAs in the micrometer range and oriented in \|111\| directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores intersection is presented which is a very promising feature for three-dimensional micro- and nanostructuring of III–V compounds for the production of photonic materials.	en_US
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	pores	en_US
dc.subject	electrolytes	en_US
dc.subject	anodization	en_US
dc.subject	photonic materials	en_US
dc.title	Observation of crossing pores in anodically etched n-GaAs	en_US
dc.type	Article	en_US