Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays

LUPAN, O.; CHOW, L.; URSAKI, V.; MONAICO, E.; TIGINYANU, I.; SHISHIYANU, S.; SHISHIYANU, T.; PARK, S.; SCHULTE, A.

Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays

LUPAN, O.; CHOW, L.; URSAKI, V.; MONAICO, E.; TIGINYANU, I.; SHISHIYANU, S.; SHISHIYANU, T.; PARK, S.; SCHULTE, A.

URI: https://doi.org/10.1109/SMICND.2007.4519732
http://repository.utm.md/handle/5014/9088

Date: 2007

Abstract:

Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photothermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostrnctures at 700 degC in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and AI doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed.