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Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays

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dc.contributor.author LUPAN, O.
dc.contributor.author CHOW, L.
dc.contributor.author URSAKI, V.
dc.contributor.author MONAICO, E.
dc.contributor.author TIGINYANU, I.
dc.contributor.author SHISHIYANU, S.
dc.contributor.author SHISHIYANU, T.
dc.contributor.author PARK, S.
dc.contributor.author SCHULTE, A.
dc.date.accessioned 2020-08-17T14:13:24Z
dc.date.available 2020-08-17T14:13:24Z
dc.date.issued 2007
dc.identifier.citation LUPAN, O., CHOW, L., URSAKI, V. et al. Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays. In: International Semiconductor Conference: intern.conf., 15 Oct.-17 Sept. Sinaia, Romania, 2007, V. 2, pp. 349-352. ISBN 978-1-4244-0847-4. en_US
dc.identifier.isbn 978-1-4244-0847-4
dc.identifier.uri https://doi.org/10.1109/SMICND.2007.4519732
dc.identifier.uri http://repository.utm.md/handle/5014/9088
dc.description Access full text - https://doi.org/10.1109/SMICND.2007.4519732 en_US
dc.description.abstract Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photothermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostrnctures at 700 degC in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and AI doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed. en_US
dc.language.iso en en_US
dc.publisher Institute of Electrical and Electronics Engineerings, IEEE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject crystals en_US
dc.subject doping profiles en_US
dc.subject semiconductors en_US
dc.subject nanostructured materials en_US
dc.subject photoluminescence en_US
dc.subject photothermal effects en_US
dc.subject nanorods en_US
dc.subject nanostructures en_US
dc.subject optical sensors en_US
dc.title Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays en_US
dc.type Article en_US


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