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Properties of SIO2 thin films prepared by anodic oxidation under UV illumination and rapid photothermal processing

Properties of SIO2 thin films prepared by anodic oxidation under UV illumination and rapid photothermal processing

SHISHIYANU, S. T.; LUPAN, O. I.; SHISHIYANU, T. S.; ŞONTEA, V. P.; RAILEAN, S. K.
URI: https://doi.org/10.1016/j.electacta.2004.04.034
http://repository.utm.md/handle/5014/8316
Date: 2004

Abstract:

Anodic oxidation under ultraviolet (UV) illumination and rapid photothermal processing technique used for high quality oxide preparation in terms of device surface passivation and gate or tunnel dielectrics are reported.

Description:

Access full text - https://doi.org/10.1016/j.electacta.2004.04.034

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