Properties of SIO2 thin films prepared by anodic oxidation under UV illumination and rapid photothermal processing

SHISHIYANU, S. T.; LUPAN, O. I.; SHISHIYANU, T. S.; ŞONTEA, V. P.; RAILEAN, S. K.

dc.contributor.author	SHISHIYANU, S. T.
dc.contributor.author	LUPAN, O. I.
dc.contributor.author	SHISHIYANU, T. S.
dc.contributor.author	ŞONTEA, V. P.
dc.contributor.author	RAILEAN, S. K.
dc.date.accessioned	2020-05-21T12:49:38Z
dc.date.available	2020-05-21T12:49:38Z
dc.date.issued	2004
dc.identifier.citation	SHISHIYANU, S. T., LUPAN, O. I., SHISHIYANU, T. S. et al. Properties of SIO2 thin films prepared by anodic oxidation under UV illumination and rapid photothermal processing. In: Electrochimica Acta. 2004, vol. 49, Is. 25, pp. 4433-4438. ISSN 0013-4686.	en_US
dc.identifier.issn	0013-4686
dc.identifier.uri	https://doi.org/10.1016/j.electacta.2004.04.034
dc.identifier.uri	http://repository.utm.md/handle/5014/8316
dc.description	Access full text - https://doi.org/10.1016/j.electacta.2004.04.034	en_US
dc.description.abstract	Anodic oxidation under ultraviolet (UV) illumination and rapid photothermal processing technique used for high quality oxide preparation in terms of device surface passivation and gate or tunnel dielectrics are reported.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	anodic oxidation	en_US
dc.subject	silicon oxide	en_US
dc.subject	ultraviolet illumination	en_US
dc.subject	illumination	en_US
dc.subject	photothermal processing	en_US
dc.title	Properties of SIO2 thin films prepared by anodic oxidation under UV illumination and rapid photothermal processing	en_US
dc.type	Article	en_US