Articole din publicaţii internaţionale: Recent submissions

  • PURICA, Munizer; BUDIANU, Elena; RUSU, Emil (Elservier, 2000)
    Thin films of ZnO were deposited by thermal decomposition of Zn(C5H7O2)2 on semiconductor substrate, n-type silicon, p-type InP and also on transparent glass substrate. The obtained ZnO/Si and ZnO/InP heterostructures were ...
  • PURICA, M.; BUDIANU, E.; RUSU, E.; ARABADJI, P. (Elservier, 2006)
    The n+-CdS/p-InP heterojunctions have been prepared by chemical vapor deposition in a quasi-closed volume and H2 transport of CdS on InP substrate. The n+-CdS/p-p+-InP heterojunction solar cells obtained using this technique ...
  • PURICA, M.; BUDIANU, E.; GROZESCU, I.; RUSU, E.; SLOBODCHIKOV, S. V. (IEEE, 2001)
    The quadrant p-i-n photodiode and the position sensing detector based on the longitudinal photo-effect are the most suitable photodetector structures for coordinate sensitive detection systems. The optimization of a quadrant ...
  • BUDEANU, E.; GROZESCU, I.; PURICA, M.; RUSU, E.; SLOBODCHIKOV, S. V. (IEEE, 2000)
    The dependence of the longitudinal photo-e.m.f. in In/sub 0.53/Ga/sub 0.47/As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence V/sub phl/=f(x) has been observed ...
  • BUINITSKAYA, G.; KRAVETSKY, I.; KULYUK, L.; MIROVITSKII, V.; RUSU, E. (IEEE, 1998)
    Thin polycrystalline zinc oxide film deposed on glass substrate have been investigated by optical second harmonic generation (SHG). The intensity of SHG in dependence of rotation angle of fundamental beam polarization for ...
  • GRABKO, Daria; PALISTRANT, Natalia; DYNTU, Maria; MEDINSCHI, Maria; RUSU, E. (Romanian Academy, 1998)
    The regularities of plastic deformation under the action of concentrated load in two crystallographic directions <100> and <110> in InP crystals doped with zinc have been investigated.
  • SHISHIYANU, S.; SINGH, R.; SHISHIYANU, T.; ASHER, S.; REEDY, R. (IEEE, 2011)
    In this paper, we have presented the experimental results of phosphorus diffusion in silicon for the cases of rapid thermal processing (RTP) and rapid photothermal processing (RPP). In the case of the RPP, other than thermal ...
  • SHISHIYANU, T. S.; STNISHCHUK, I. K.; SHISHIYANU, S. T. (Taylor & Francis, 1995)
    New physical and technological methods of the radiation-stimulated diffusion of impurities and defects, based on the combined action of gamma-radiation (α, βe−) ion implantations, and pulse phoion annealing in semiconductors, ...
  • SHISHIYANU, S. (IEEE, 2006)
  • SHISHIYANU, S. T.; SHISHIYANU, T. S. (IEEE, 2010)
    The experimental results of the Rapid Photothermal Diffusion (RPD) of Zn in GaAs and p-n junction formation, model and role of quantum factor in this process are presented in this paper. The p-n junctions with depth of ...
  • ERGIN, F. Belgin; TURAN, Raşit; SHISHIYANU, Sergiu T.; YILMAZ, Ercan (Elservier, 2010)
    Radiation effects on Metal Oxide Semiconductor (MOS) capacitors with a HfO2 gate insulator have been studied. Because HfO2 is a promising high-k dielectric material for microelectronic applications, radiation effects on ...
  • SHISHIYANU, S. T.; SHISHIYANU, T. S.; STEFANOV, P. S.; GUEORGUIEV, V. K. (Springer Nature Switzerland, 2013)
    Diamond-like carbon films (DLC films) for cardiovascular implants have successfully been prepared by dual-target unbalanced magnetron sputtering and Rapid Photothermal Processing (RPP). It is found that the sputtering ...
  • РАДАУЦАН, С. И.; СЫРБУ, Н. Н.; ВОЛОДИНА, В. И.; КИОСЕВ, В. К. (Russian Academy of Sciences, 1976)
    В данном сообщении исследованы модулированные по длине волны спектры фотоответа поверхностно-барьерных диодов Au—Zn3P2. Для этих диодов изучено изменение формы дифференциальных спектров от напряжения смещения.
  • NEUMANN, H.; SOBOTTA, H.; RIEDE, V.; SYRBU, N. N.; RADAUTSAN, S. I. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1984)
    Polarization-dependent infrared reflectivity spectra of CdGa2S4 are measured at 300 K in the wavenumber range from 180 to 500 cm−1. The analysis of the spectra yields three E and four B modes in this frequency range. The ...
  • SYRBU, N. N.; BOGDANASH, M.; TEZLEVAN, V. E. (IEEE, 1996)
    In the present paper new results of Raman scattering of CuAl/sub 1-x/Ga/sub x/Se/sub 2/ crystals by the unpolarized light at 77 K are presented. IR reflectivity spectra of this solid solution have been investigated for ...
  • SYRBU, N. N.; BOGDANASH, M.; MOLDOVYAN, N. A. (Elservier, 1996)
    Infrared reflectivity spectra and Raman scattering of the ZnAl2S4 and CdIn2S4 crystals have been investigated. Reflectivity spectra contours were calculated and phonon parameters and dielectric constants were determined. ...
  • SYRBU, N. N.; NEMERENCO, L. L.; COJOCARU, O. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2002)
    In this work the vibrational and polariton optical spectra of the CdGa2S4 and CdAl2S4 crystals grown from vapor phase and by the Bridgman method have been investigated. The light scattering by polaritons excited of various ...
  • ARUSHANOV, E.; LEVCENKO, S.; SYRBU, N. N.; NATEPROV, A.; TEZLEVAN, V.; MERINO, J. M.; LEÓN, M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2006)
    Optical absorption spectra of CuIn5Se8 and CuGa3Se5 single crystals grown by chemical vapour transport were investigated in the range of 10–300 K. The logarithmic variation of the absorption coefficient with photon energy ...
  • ZALAMAI, V. V.; SYRBU, N. N.; RUSU, E. V.; TIRON, A.; BEJAN, N. P. (IOP Publishing, 2018)
    Photoluminescence spectra of ZnAl2Se4:Sm2+ due to the processes of charge carriers recombination from levels 5Dj, 5Lj, 5Gj and 5Hj (4f55d1) on levels 7Fj of samarium ions were investigated. The broad photoluminescence band ...
  • SYRBU, N. N.; STAMOV, I. G.; DOROGAN, A. V.; ZALAMAI, V. V. (Elservier, 2021)
    Optical properties of GaSe crystals have been investigated at wide temperature range from 10 to 300 K by help of reflection, absorption, and wavelength modulated reflection, and transmission spectra. Received data were ...

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