Articole din publicaţii internaţionale: Recent submissions

Now showing items 2021-2040 of 3219

Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport

COLIBABA, G. V.; RUSNAC, D.; FEDOROV, V.; PETRENKO, P.; MONAICO, E. V. (Elservier, 2021)

A new technology for sintering a ZnO + Ga2O3 powder via chemical vapor transport based on HCl has been developed. The proposed sintering method has the following advantages: a low sintering temperature of 1000–1100 °C, ...
ZnO/InP thin film heterojunction for photovoltaic applications

PURICA, M.; RUSU, E.; BUDIANU, E.; NAN, S. (IEEE, 1998)

A ZnO/InP heterojunction was obtained by the ZnO thin film deposition on p-InP epitaxial layer by the decomposition of metalorganic compounds as Zn acetylacetonate. The surface morphology and measurements of optoelectronical ...
ZnO thin films on semiconductor substrate for large area photodetector applications

PURICA, Munizer; BUDIANU, Elena; RUSU, Emil (Elservier, 2006)

Heterojunctions with transparent and conductive layers of ZnO on Si and InP substrates were prepared and investigated for photodetector applications in order to increase the sensibility of the conventional photodetectors ...
ZnO thin film optical window as partner for photodetecting heterostructures on Si and InP

BUDIANU, E.; PURICA, M.; GAVRILA, R.; NASTASE, S.; RUSU, E.; SLOBODCHIKOV, S. V.; TURCU, M. (IEEE, 1999)

Thin films of ZnO were deposited by thermal decomposition of Zn(C/sub 5/H/sub 7/O/sub 2/)/sub 2/ on semiconductor substrate, n-type silicon, p-type InP and also on transparent glass substrate. The heterostructures of ZnO/Si ...
ZnO single crystal and epitaxial thin film studied by second harmonic generation and photoluminescence

BUINITSKAYA, G.; KULYUK, L.; MIROVITSKII, V.; RUSU, E.; MISHINA, E.; SHERSTYUK, N. (Elservier, 2006)

Zinc oxide thin nanostructured film and single crystal were studied by photoluminescence (PL) and optical second harmonic generation (SHG). The single crystal reveals a strong blue excitonic luminescence, while for thin ...
The luminescent properties of a ZnGa2O4 spinel doped with Eu 3+ and Er3+ ions

VASILE, M.; VLAZAN, P.; SFIRLOAGA, P.; GROZESCU, I.; AVRAM, N. M.; RUSU, E. (IOP Publishing, 2009)

Nanophosphor of ZnGa2O4:Eu3+ and Er3+ were synthesized by the hydrothermal method. ZnGa2O4 is an intrinsic blue light emitter with a wavelength peak of approximately 608 nm depending on the gallium ratio. A luminescent ...
Structural and optoelectrical investigation of transparent and conductive ZnO thin films prepared by chemical vapor deposition

PURICA, M.; BUDIANU, E.; RUSU, E.; DANILA, M.; GAVRILA, R. (IEEE, 1998)

Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C/sub 5/H/sub 7/O/sub 2/)/sub 2/ as Zn source. The deposited thin ZnO layers of /spl sim/0,1 /spl ...
Speed and efficiency of the PIN homojunction photodiodes on InGaAs/InP heterostructures

BUDIANU, E.; PURICA, M.; RUSU, E.; NAN, S. (IEEE, 1998)

In this paper we present the optimization of a PIN photodiode on A/sup III/B/sup V/ heterostructure and technological processing for a high speed operation over a large spectral range (0.8-1.6) /spl mu/m. A theoretical ...
Schottky barrier on the InGaAs/InP heterostructures grown by the CL-VPE technique for photodetectors

RUSU, E.; BUDIANU, E.; NAN, S.; PURICA, M. (IEEE, 1996)

The Schottky barriers of Ag, Ti, Ni, on n and p iso-type heterostructures of In/sub 0.53/Ga/sub 0.47/As/InP, grown by the CL-VPE technique, have shown that values of 0.6 eV for Ag/p-InGaAs barrier height and of 0.46 eV on ...
Polysilicon thin layers for photovoltaic applications

BUDIANU, E.; PURICA, M.; RUSU, E.; MANEA, E.; GAVRILA, R. (IEEE, 2002)

Thin layers of polycrystalline silicon as the optically absorbing material for photovoltaic devices represents a promising way for simultaneously achieving good performances and low manufacturing cost. In this paper, the ...
Photoluminescence and resonant Raman scattering in highly conductive ZnO layers

ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V.; ARABADJI, P.; TIGINYANU, I. M.; SIRBU, L. (American Institute of Physics, 2004)

Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound ...
Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP

RUSU, E. V.; SLOBODCHIKOV, S. V.; SALIKHOV, H. M.; TURCU, M. (IEEE, 1998)

The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H/sub 2/ atmosphere on these characteristics have been ...
Optical improved structure of polycrystalline silicon-based thin-film solar cell

BUDIANU, Elena; PURICA, Munizer; MANEA, Elena; RUSU, Emil; GAVRILA, Raluca; DANILA, Mihai (Elservier, 2002)

This paper presents an n-i-p type solar cell structure consisting of polycrystalline silicon thin film as an absorber of incident radiation and a ZnO thin film for optical improvement. The characteristics of Si layers ...
Optical and structural investigation of ZnO thin films prepared by chemical vapor deposition (CVD)

PURICA, M.; BUDIANU, E.; RUSU, E.; DANILA, M.; GAVRILA, R. (Elservier, 2002)

Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C5H7O2)2 as Zn source. The deposited thin ZnO layers of ∼0.1 μm thickness on Si and InP semiconductor ...
Optical and electrical properties of the CdS/InP heterostructures solar cells

SLOBODCHIKOV, S. V.; RUSU, E.; ARABADJI, P.; PURICA, M.; BUDIANU, E. (IEEE, 2004)

Technological procedures of solar cells fabrication based on n/sup +/-CdS/p-p/sup +/-InP heterostructures are presented. The conversion efficiency under AM 1.5 illumination condition of the obtained solar cell was /spl ...
New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis

ARSENTIEV, I. N.; BOBYI, A. V.; BOLTOVETS, N. S.; IVANOV, V. N.; KONAKOVA, R. V.; KUDRYK, Y. Y.; LYTVYN, O. S.; MILENIN, V. V.; TARASOV, I. S.; BELYAEV, A. E.; RUSU, E. V. (IEEE, 2004)

A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n/sup +/-InP substrates is considered. We studied surface morphology, boundary between phases in TiB/sub x/-n-InP ...
Mechanical Properties of Oxide Coatings Having Sensor Application

GRABCO, D.; PALISTRANT, N.; JITARU, R.; RUSU, E. (Springer Nature Switzerland, 2003)

An experimental investigation of the mechanical properties of planar structures of ZnO/Si for different indentor loads has been described. The influence of intensive solar-like light and temperature on hardness and plasticity ...
Luminescence of ZnGa2Î4 AND ZnAl2Î4 spinels doped with Eu3+AND Tb3+ ions

RUSU, E.; URSAKI, V.; NOVITSCHI, G.; BURLACU, A.; PETRENKO, P.; KULIUK, L. (I. I. Mechnikov National University, Odessa, 2008)

Spinel type mono-phase the ZnGa2O4 and ZnAl2O4 compounds doped with Eu3+ and Tb3+ ions were obtained using two methods: solid phase reactions and deposition from chemical solutions. The luminescent analysis of the materials ...
Local Nonlinearities of ZnO Nanostructures

SHVIRKOV, K.; KEDRYAVTSEV, A.; LAVROV, S.; SHERSTYUK, N. E.; MISHINA, E. D.; RUSU, E.; KULYUK, L. (EMW Publishing, 2012)

The results of two-photon luminescence studies of zinc oxide (ZnO) microstructures consisting of microrods and microplanes are presented in this paper. When ZnO microstructure is excited by a femtosecond laser with a ...
Increasing of dislocation mobility by heat treatment of deformed pure and doped InP crystals

GRABCO, D.; PALISTRANT, N.; RUSU, E. (Elservier, 2001)

The influence of dopant impurity type on the dislocation mobility in InP crystals is investigated. It is shown that the dislocation mobility (γ, γs) under action of a concentrated load depends on impurity type and deformation ...

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