New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis

ARSENTIEV, I. N.; BOBYI, A. V.; BOLTOVETS, N. S.; IVANOV, V. N.; KONAKOVA, R. V.; KUDRYK, Y. Y.; LYTVYN, O. S.; MILENIN, V. V.; TARASOV, I. S.; BELYAEV, A. E.; RUSU, E. V.

New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis

ARSENTIEV, I. N.; BOBYI, A. V.; BOLTOVETS, N. S.; IVANOV, V. N.; KONAKOVA, R. V.; KUDRYK, Y. Y.; LYTVYN, O. S.; MILENIN, V. V.; TARASOV, I. S.; BELYAEV, A. E.; RUSU, E. V.

URI: https://doi.org/10.1109/CRMICO.2004.183319
http://repository.utm.md/handle/5014/12427

Date: 2004

Abstract:

A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n/sup +/-InP substrates is considered. We studied surface morphology, boundary between phases in TiB/sub x/-n-InP contact and I-V curves of Au-TiB/sub x/-n-InP Schottky diodes made on "soft" and "rigid" (standard) n/sup +/-InP substrates. The advantages of epitaxial layers grown on porous n/sup +/-InP substrates and barrier structures on their basis are demonstrated.