Articole din publicaţii internaţionale: Recent submissions

Now showing items 1941-1960 of 3218

Electro- and photostimulated chemical processes in aluminium-chalcogenide glass semiconductor thin layer structures

BIVOL, V. V.; TRIDUH, G. M.; AKIMOVA, E. A.; TSIULYANU, D. I. (IEEE, 1996)

The results of comparative investigations of photostructural processes in As/sub 2/Se/sub 3/ layers and of electrophotoinduced changes in Al-As/sub 2/Se/sub 3/ structures are presented. It was found that in Al-chalcogenide ...
Электроуправляемые светочувствительные структуры на основе халькогенидных стеклообразных полупроводников

АНДРИЕШ, А. М.; ЦИУЛЯНУ, Д. И.; ТРИДУХ, Г. М. (Ioffe Institute, RAS, 1983)

Представлены результаты экспериментального исследования процесса записи изображения на электроуправляемых тонкослойных структурах халькогенидный стеклообразный полупроводник—металл. Показано, что светочувствительность ...
Elastic properties of micrononhomogeneous As-S-Ge alloys

TSIULYANU, D. I.; DRAGICH, A. D.; GUMENIUK, N. A. (Elsevier, 1993)

The chalcogenide alloys As-S-Ge have been prepared by a melt-quenching method and their density, microstructure and ultrasonic longitudinal sound velocity have been investigated at 15 MHz. The longitudinal modulus was ...
Effect of the topological transition on the optical absorption edge of sulphur-based glasses

TSIULYANU, D. I.; MARIAN, S. I. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1996)

Exponential absorption edge of chalcogenide glassy alloys with sulphur in the region of topological transition is studied. It is shown that the slope of the tail depends on mean coordination number and stoichiometry of the ...
Effect of the Ge Concentration on the Photoformation of Solid Electrolytes in Ag/As-S-Ge Thin Films

STRATAN, I.; CIOBANU, M.; TSIULYANU, D. (Springer Nature Switzerland, 2015)

Solid electrolytes in the system Ag/As-S-Ge have been fabricated by Ag photodissolution into glassy thin As-S-Ge films of various composition. To realize the transition from a trigonal to a tetragonal structure of the ...
Effect of temperature on the NO/sub 2/ sensing properties of tellurium based films

TSIULYANU, A.; TSIULYANU, D.; LIESS, H.-D. (IEEE, 2004)

Influence of temperature on the electrical and sensing properties toward NO/sub 2/ of tellurium based films were investigated. Temperature-dependent electrical conductivity is strongly affected by the presence of an NO/sub ...
Effect of annealing and temperature on the NO2 sensing properties of tellurium based films

TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (Elsevier, 2004)

Influences of temperature and annealing on the electrical and sensing properties toward NO2 of tellurium based films were investigated. The annealing at temperatures more than 100°C causes a sharp decrease both of electrical ...
Effect of aging and temperature on alternating current conductivity of tellurium thin films

TSIULYANU, D.; MARIAN, T.; TIULEANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2009)

The impedance spectra of tellurium films with interdigital platinum electrodes were investigated in air at temperatures between 10 and 50 °C. Cole–Cole analysis made it possible to assess time constants, resistance, and ...
Dimorphite based gas sensitive thin films

MARIAN, S.; POTJE-KAMLOTH, K.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2000)

For the first time it was observed that thin films based on artificial dimorphite (As4S3) exhibit gas sensitivity at room temperature. A sandwich metal-semiconductor-metal (MSM) structure with dimorphite as the semiconducting ...
DC conductivity and charge transport in vitreous As2S3Ge8 – Te films

CIOBANU, M.; TSIULYANU, D. (Virtual Company of Physics, 2018)

Amorphous tellurium and Te based quaternary films have been grown onto both glassy (Pyrex) and ceramic Al2O3 substrates by a high speed thermal deposition in vacuum. The SEM and XRD analysis of the films was provided and ...
Current Transport in Metal-Chalcogenide Glass Structures with Blocking Barrier at the Interface

TSIULYANU, D. I.; TRIDUCH, G. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1991)

The formation of a Schottky-Mott barrier at the interface of metals with chalcogenide glasses (ChG) is studied several papers. Many parameters of these barriers and the physical factors responsible for their formation ...
Concentration induced damping of gas sensitivity in ultrathin tellurium films

TSIULYANU, D.; MOCREAC, O. (Elsevier, 2013)

The damping of sensitivity induced by high gas (NO2) concentration in tellurium films was observed for the first time. The phenomenon becomes apparent in ultrathin (less than 40nm) shown by AFM, SEM and XRD analyses to be ...
Characterization of tellurium-based films for NO2 detection

TSIULYANU, D.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2005)

Sensing characteristics of tellurium-based thin films for NO2 monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical ...
Chalcogenide-based chemical sensors for atmospheric pollution control

MARIAN, S.; TSIULYANU, D.; MARIAN, T.; LIESS, H.-D. (De Gruyter, 2001)

The authors report about characterization of chalcogenide-based thin films, as a materials for gas-sensing applications. The sensing behavior of the As–S–Te films was tested with environmental pollutant gases such as NO2, ...
Chalcogenide semiconductor based sensor for fast NO/sub 2/ detection

TSIULYANU, D.; MARIAN, S.; MIRON, V.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 2000)

For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO/sub 2/. ...
Chalcogenide glassy-based photoresists for microelectronics

TSIULYANU, D. I. (IEEE, 1995)

Possibilities of application in microelectronics of chalcogenide glassy semiconductors (ChGS) as inorganic high-resolution photoresists is treated. A brief consideration of three main effects: photostructural transformations, ...
Chalcogenide based gas sensors

TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2003)

Evidence for direct application of the chalcogenide semiconductors for gas sensing is considered. Two kinds of sensitive thin film structures have been fabricated and studied, using both artificial dimorphite (As4S3) and ...
Arsenic trisulphide in isotype amorphous–crystalline heterojunctions

TSIULYANU, D. I.; ANDRIESH, A. M.; KOLOMEYKO, E. P. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1978)

Results are given of electrophysical properties of isotype amorphous As2S3-crystalline p-Si heterojunctions. It is shown that the forward currents are limited by the space charge in As2S3 and the reverse ones are limited ...
Анодный электродный процесс в халькогенидных стеклообразных полупроводниках, стимулированный внешними воздействиями

АНДРИЕШ, А. М.; НЕФЕДОВ, В. Я .; ЦИУЛЯНУ, Д. Я .; СОКОЛОВ, А. Н.; ТРИДУХ, Г. М.; ГРИНШПУН, Л. Б. (Ioffe Institute, RAS, 1990)

В качестве объекта исследований использовались тонкослойные структуры Al—As 2S8Ge 4 , изготовленные термическим вакуумным напылением на стеклянные подложки с предварительно нанесенным проводящим слоем двуокиси олова. ...
Absorption edge and dispersion of the refractive index of arsenic-sulfur-germanium layers with an increased sulfur concentration

TSIULYANU, D. I.; GUMENYUK, N. A. (Springer Nature Switzerland, 1990)

The interest in the optical properties of glassy materials of the As-S-Ge system and thin layers based on them has increased recently owing to the development of electro-optics and integrated optics. These materials form ...

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