Articole din publicaţii internaţionale: Recent submissions

Now showing items 1921-1940 of 3216

Peculiarities of Ultrathin Amorphous and Nanostructured Te Thin Films by Gas Sensing

TSIULYANU, D.; MOCREAC, O.; CIOBANU, M.; ENACHI, M.; VOLODINA, G. (American Scientific Publishers, 2014)

The extinction of sensitivity to nitrogen dioxide induced by high gas concentration have been observed in ultrathin tellurium films. The phenomenon becomes apparent in both continuous and nanostructured films shown by AFM, ...
Optical absorption and thermal expansion of semiconductor glasses As-S-Ge by topological transition

TSIULYANU, D.; GUMENYUK, N.; MARIAN, S. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1995)

The effect of mean coordination number r on the optical absorption in the region of exponential tail and on the thermal expansion of chalcogenide glasses As-S-Ge are presented. Several important parameters such as optical ...
Optical absorption of chalcogenide glassy photoresists As-S-Ge

MARIAN, S.; TSIULYANU, D. I. (IEEE, 1995)

The absorption edge of some chalcogenide glassy semiconductors (ChGS) As-S-Ge both in bulk and thin films is studied. The region of the Urbach tail is considered particularly as it determines the efficiency of photostructural ...
On the photodissolution kinetics of silver in glassy As2S3

TSIULYANU, D.; STRATAN, I. (Elsevier, 2010)

The kinetics of the photodissolution of Ag into glassy As2S3 films and its dependence on temperature have been studied by monitoring the changes that occur both in their transmission spectra and transmission of weakly ...
О механизме токопрохождения в изотипных гетеропереходах стеклообразный As2S3-p- Si

АНДРИЕШ, А. М.; ЦИУЛЯНУ, Д. И.; КОЛОМЕЙКО, Э. П. (Ioffe Institute, RAS, 1985)

Исследована зависимость ВАХ изотипных гетеропереходов стеклообразный As2S3—монокристалл кремния от толщины стеклообразного слоя в широких интервалах приложенных напряжений (10 -2 ≤ U ≤ 10 2 В) и температур (77 ≤ Т ≤ 400 ...
On the Influence of Surface Phenomena Upon Charge Transport in Te-Based Glassy Semiconductors

TSIULYANU, Dumitru; CIOBANU, M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2018)

The effect of surface phenomena caused by adsorption of NO2, CO2, and H2O vapor on the charge transport in thin films of chalcogenide glassy semiconductors (ChGS) of the As2S3Ge8–Te system has been studied.
Nitrogen dioxide sensing properties of tellurium based films by thermal treatment

TSIULYANU, A.; MARIAN, S.; PUSHCACH, B.; TSIULYANU, D.; LIESS, H.-D. (IEEE, 2003)

Influence of annealing on the electrical and sensing properties toward NO/sub 2/ of tellurium based films were investigated. The annealing at temperatures more than 100/spl deg/C causes a sharp decrease both of electrical ...
Nanoscience Advances in CBRN Agent Detection, Information and Energy Security: An Introduction

PETKOV, P.; TSIULYANU, D.; POPOV, C.; KULISCH, W. (Springer Nature Switzerland, 2015)

The present volume comprises the most important contributions to the NATO ASI “Nanoscience advances in CBRN agent detection, information and energy security” held on 29.5.–6.6.2014 in Sozopol, Bulgaria. This short introduction ...
Nanocrystalline Tellurium Films: Fabrication and Gas Sensing Properties

TSIULYANU, D.; MORARU, A. (Springer Nature Switzerland, 2015)

A brief review of achievements in the fabrication of nanostructured tellurium thin films for applications in sensor technology is reported, paying particular attention to physical growth of nanocrystalline films in vacuum.
Investigation of the oxygen, nitrogen and water vapour cross-sensitivity to NO2 of tellurium-based thin films

TSIULYANU, D.; STRATAN, I.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2007)

Effect of O2, N2 and H2O to electrical behavior of tellurium-based films as well as cross-sensitivity to NO2 gas has been studied at temperatures between 20 and 70°C. The increase of oxygen partial pressure in N2+O2 carrier ...
Investigation of hole transport in vitreous As2S3

ANDRIESH, A. M.; IOVU, M. S.; KOLOMEYKO, E. P.; TSIULYANU, D. I.; SHUTOV, S. D. (Elsevier, 1980)

The time-of-flight measurements of the hole drift in As2S 3 films have shown that below 80°C the typical dispersive transport occurs. Very low drift mobility values (~10-10cm2/Vs at 45oc) correspond to an activation energy ...
Influence of annealing and temperature on the absorption edge of As2S3-Ge amorphous films

ANDRIESH, A. M.; TSIULYANU, D. I. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1973)

Results are presented of absorption edge investigations of AsS1.5Gex amorphous films (0 ≤ × ≤ 2) at temperatures of 110, 300, 370, and 420 °K. An effect of low-temperature annealing on the optical parameters of the films ...
Impedance Spectroscopy of Tellurium Thin Films Sensitive to NO2

TSIULYANU, D.; MOCREAC, O. (Springer Nature Switzerland, 2011)

Impedance spectra of tellurium thin films with interdigital platinum electrodes have been measured in dry synthetic air and gaseous media with nitrogen dioxide. Analyses of Cole-Cole plots allowed to evaluate the characteristic ...
Impact of Adsorbed Gases on the Transport Mechanisms in Ge8As2Te13S3 Amorphous Films

TSIULYANU, D.; CIOBANU, M. (Springer Nature Switzerland, 2019)

It is shown that the gas adsorption in chalcogenide glasses results in modifications of transport mechanisms by the surface, along with formation of surface localized states. A detailed quantitative analysis is made on ...
High sensitive tellurium based NO2 gas sensor

TSIULYANU, D.; MARIAN, S.; MIRON, V.; LIESS, H.-D. (Elsevier, 2001)

For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO2. The ...
Ge–As–Te-based gas sensor selective to low NO2 concentrations

MARIAN, S.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2001)

A new kind of gas sensor based on chalcogenide glassy semiconductors for the detection of nitrogen dioxide has been investigated. It contains a sandwich metal–semiconductor (Ge–As–Te ternary alloys)–metal structure which ...
Формирование краев запрещенной зоны в халькогенидных стеклообразных полупроводниках системы As2S3-Ge

ЦИУЛЯНУ, Д. И. (Ioffe Institute, RAS, 1986)

В настоящей работе приводятся экспериментальные данные, показывающие, что в случае твердых растворов системы As2S3—Ge уменьшение Ед действительно происходит за счет сдвига только одной, а именно валентной зоны.
Formation of gap edges and shift of Fermi level in As2S3 - based glass alloys with addition of germanium

ANDRIESH, A. M.; TSIULYANU, D. I. (Elsevier, 1987)

The gap formation with the composition change is studied on the basis of complex analysis of the experimental results obtained by investigation of optical absorption and conductivity of both As2S3 Ge glassy materials and ...
Electro- and photostimulated chemical processes in aluminium-chalcogenide glass semiconductor thin layer structures

BIVOL, V. V.; TRIDUH, G. M.; AKIMOVA, E. A.; TSIULYANU, D. I. (IEEE, 1996)

The results of comparative investigations of photostructural processes in As/sub 2/Se/sub 3/ layers and of electrophotoinduced changes in Al-As/sub 2/Se/sub 3/ structures are presented. It was found that in Al-chalcogenide ...
Электроуправляемые светочувствительные структуры на основе халькогенидных стеклообразных полупроводников

АНДРИЕШ, А. М.; ЦИУЛЯНУ, Д. И.; ТРИДУХ, Г. М. (Ioffe Institute, RAS, 1983)

Представлены результаты экспериментального исследования процесса записи изображения на электроуправляемых тонкослойных структурах халькогенидный стеклообразный полупроводник—металл. Показано, что светочувствительность ...

Now showing items 1921-1940 of 3216

Search DSpace

Browse

All of DSpace
This Collection
- By Issue Date
- Authors
- Titles
- Subjects

Recently added

Articole din publicaţii internaţionale: Recent submissions

Search DSpace

Browse

All of DSpace

This Collection

My Account