Investigation of hole transport in vitreous As2S3

Abstract

The time-of-flight measurements of the hole drift in As2S 3 films have shown that below 80°C the typical dispersive transport occurs. Very low drift mobility values (~10-10cm2/Vs at 45oc) correspond to an activation energy of 0.6 to 0.8 eV at low injection levels. At high-level injection obtained with the forward biased p-Si-As2S 3 heterojunction the drift mobility is much greater and has the value of 10 -5 cm2/ Vs at room temperature.