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Browsing Articole din publicaţii internaţionale by Author "TSIULYANU, D."

Browsing Articole din publicaţii internaţionale by Author "TSIULYANU, D."

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  • Chalcogenide based gas sensors 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2003)
    Evidence for direct application of the chalcogenide semiconductors for gas sensing is considered. Two kinds of sensitive thin film structures have been fabricated and studied, using both artificial dimorphite (As4S3) and ...
  • Chalcogenide based sensitive layers for work function gas and humidity sensors 
    TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Одеський нацiональный университет iменi I. I. Мечникова, 2012)
    In this work the authors report about characterization of chalcogenide based thin films, as a materials for gas – sensing applications. The sensing behavior of the As-S-Te-Ge films was tested with environmental pollutant ...
  • Chalcogenide semiconductor based sensor for fast NO/sub 2/ detection 
    TSIULYANU, D.; MARIAN, S.; MIRON, V.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 2000)
    For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO/sub 2/. ...
  • Chalcogenide-based chemical sensors for atmospheric pollution control 
    MARIAN, S.; TSIULYANU, D.; MARIAN, T.; LIESS, H.-D. (De Gruyter, 2001)
    The authors report about characterization of chalcogenide-based thin films, as a materials for gas-sensing applications. The sensing behavior of the As–S–Te films was tested with environmental pollutant gases such as NO2, ...
  • Characterization of tellurium-based films for NO2 detection 
    TSIULYANU, D.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2005)
    Sensing characteristics of tellurium-based thin films for NO2 monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical ...
  • Charge transport mechanisms in quaternary glassy S -Te based thin films 
    CIOBANU, M.; TSIULYANU, D. (Institutul de Fizică Aplicată, 2016)
    Several compositions of quaternary materials in the As-S-Ge-Te system were synthesized by meltquenching technique and the respective thin films have been fabricated. Shown by AFM, SEM and X - ray analysis the nature of ...
  • Concentration induced damping of gas sensitivity in ultrathin tellurium films 
    TSIULYANU, D.; MOCREAC, O. (Elsevier, 2013)
    The damping of sensitivity induced by high gas (NO2) concentration in tellurium films was observed for the first time. The phenomenon becomes apparent in ultrathin (less than 40nm) shown by AFM, SEM and XRD analyses to be ...
  • DC conductivity and charge transport in vitreous As2S3Ge8 – Te films 
    CIOBANU, M.; TSIULYANU, D. (Virtual Company of Physics, 2018)
    Amorphous tellurium and Te based quaternary films have been grown onto both glassy (Pyrex) and ceramic Al2O3 substrates by a high speed thermal deposition in vacuum. The SEM and XRD analysis of the films was provided and ...
  • Dimorphite based gas sensitive thin films 
    MARIAN, S.; POTJE-KAMLOTH, K.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2000)
    For the first time it was observed that thin films based on artificial dimorphite (As4S3) exhibit gas sensitivity at room temperature. A sandwich metal-semiconductor-metal (MSM) structure with dimorphite as the semiconducting ...
  • Effect of aging and temperature on alternating current conductivity of tellurium thin films 
    TSIULYANU, D.; MARIAN, T.; TIULEANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2009)
    The impedance spectra of tellurium films with interdigital platinum electrodes were investigated in air at temperatures between 10 and 50 °C. Cole–Cole analysis made it possible to assess time constants, resistance, and ...
  • Effect of annealing and temperature on the NO2 sensing properties of tellurium based films 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (Elsevier, 2004)
    Influences of temperature and annealing on the electrical and sensing properties toward NO2 of tellurium based films were investigated. The annealing at temperatures more than 100°C causes a sharp decrease both of electrical ...
  • Effect of temperature on the NO/sub 2/ sensing properties of tellurium based films 
    TSIULYANU, A.; TSIULYANU, D.; LIESS, H.-D. (IEEE, 2004)
    Influence of temperature on the electrical and sensing properties toward NO/sub 2/ of tellurium based films were investigated. Temperature-dependent electrical conductivity is strongly affected by the presence of an NO/sub ...
  • Effect of the Ge Concentration on the Photoformation of Solid Electrolytes in Ag/As-S-Ge Thin Films 
    STRATAN, I.; CIOBANU, M.; TSIULYANU, D. (Springer Nature Switzerland, 2015)
    Solid electrolytes in the system Ag/As-S-Ge have been fabricated by Ag photodissolution into glassy thin As-S-Ge films of various composition. To realize the transition from a trigonal to a tetragonal structure of the ...
  • First Sharp Diffraction Peak features of the intermediate phase glasses and amorphous thin films in the non-stoichiometric (GeS4)x(AsS3)1-x system 
    CIOBANU, M.; GALCA, A. C.; SAVA, F.; ZAKI, M. Y.; VELEA, A.; TSIULYANU, D. (Elsevier, 2023)
    Grazing incidence X-ray scattering (GIXRS) patterns of thin solid films based on non-stoichiometric chalcogenide glasses (ChG) from the pseudo - binary system (GeS4)x(AsS3)1-x were studied with a focus on the First Sharp ...
  • Flexible thin films based on Te-SnO2 nanocomposites and their gas sensing properties 
    TSIULYANU, D.; MOCREAC, O.; AFANASIEV, A.; MONAICO, E. (International Conference on Physics of Advanced Materials (ICPAM), 2021)
    Printed electronics becomes very attractive due to the ability of using sustainable, compostable and recyclable materials including biobased plastics and paper in the elaboration of different flexible thin-film sensors, ...
  • Gas sensing characterization of tellurium thin films by Kelvin probe technique 
    TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Institutul de Fizică Aplicată al AŞM, 2012)
    In this paper, the change of work function ( Δφ ) of the tellurium thin films was studied in response to different concentrations of nitrogen dioxide, carbon oxide, ozone and water vapor using a KP with a gold grid reference ...
  • Ge–As–Te-based gas sensor selective to low NO2 concentrations 
    MARIAN, S.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2001)
    A new kind of gas sensor based on chalcogenide glassy semiconductors for the detection of nitrogen dioxide has been investigated. It contains a sandwich metal–semiconductor (Ge–As–Te ternary alloys)–metal structure which ...
  • High sensitive tellurium based NO2 gas sensor 
    TSIULYANU, D.; MARIAN, S.; MIRON, V.; LIESS, H.-D. (Elsevier, 2001)
    For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO2. The ...
  • Impact of Adsorbed Gases on the Transport Mechanisms in Ge8As2Te13S3 Amorphous Films 
    TSIULYANU, D.; CIOBANU, M. (Springer Nature Switzerland, 2019)
    It is shown that the gas adsorption in chalcogenide glasses results in modifications of transport mechanisms by the surface, along with formation of surface localized states. A detailed quantitative analysis is made on ...
  • Impedance spectroscopy of sensitive to harmful gases tellurium thin films 
    TSIULYANU, D.; MOCREAC, O. (Forum of Chalcogeniders, 2011)
    Impedance spectra of tellurium thin films with interdigital platinum electrodes have been investigated in different gaseous media. For the first time it is pointed out that tellurium films exhibit sensitivity to H2 at room ...

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