Charge transport mechanisms in quaternary glassy S -Te based thin films

Abstract

Several compositions of quaternary materials in the As-S-Ge-Te system were synthesized by meltquenching technique and the respective thin films have been fabricated. Shown by AFM, SEM and X - ray analysis the nature of the films was predominantly amorphous. In order to elucidate the mechanisms of charge transport in these films, the DC and AC conductivities have been carried out in the 10 - 200 0C temperature range and 5 - 107 Hz respectively. Direct current - voltage characteristics were measured at different temperatures in normal air ambient conditions, using a priory established electrically transparent (ohmic) Ag contacts.