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Browsing Articole din publicaţii internaţionale by Author "URSAKI, V. V."

Browsing Articole din publicaţii internaţionale by Author "URSAKI, V. V."

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  • Interaction of intrinsic defects with impurities in Al doped ZnSe single crystals 
    IVANOVA, G. N.; NEDEOGLO, D. D.; NEGEOGLO, N. D.; SIRKELI, V. P.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2007)
    We report on the results of a complex study of electrical (77−300K) and luminescence (10−300K) properties of n-ZnSen-ZnSe single crystals annealed in a Zn melt containing Al impurity at concentrations ranging from 0.1 to ...
  • The interference of additional waves of forbidden polaritons excited by allowed polaritons in CuGaS2 
    SYRBU, N. N.; URSAKI, V. V.; TIGINYANU, I. M.; TEZLEVAN, V. E.; BLAJE, M. A. (ELSEVIER, 2003)
    Additional waves of exciton polaritons are studied in thin (1.5–1.8 μm) CuGaS2 crystals at 9 K. The reflectivity spectra show a fine structure related to the interference of Fabry–Perot and additional waves which is a ...
  • Interference of ordinary and extraordinary waves in AgAsS2 crystals 
    SYRBU, N. N.; STAMOV, I. G.; URSAKI, V. V.; PARVAN, V.; IVANENCO, Yu. (ELSEVIER, 2012)
    The anisotropy of the near-bandgap absorption is investigated in AgAsS2 crystals. The refraction indices, n and n respectively for the Ec and Ec polarizations as well as the spectral dependence of the refraction ...
  • Large oscillator strength excitons in PbGa2S4 crystals 
    SYRBU, N. N.; PARVAN, V. I.; URSAKI, V. V. (ELSEVIER, 2012)
    Exciton states with a large oscillator strength (transverse–longitudinal splitting of 50meV) and binding energy of 290meV have been observed in PbGa2S4 crystals. The ground exciton states are stable up to the room temperature. ...
  • Lasing with guided modes in ZnO nanorods and nanowires 
    ZALAMAI, V. V.; URSAKI, V. V.; KLINGSHIRN, C.; KALT, H.; EMELCHENKO, G. A.; REDKIN, A. N. (Springer Nature Switzerland, 2009)
    A vertically arranged nearly parallel array of ZnO nanorods and randomly oriented nanowires has been grown by low pressure chemical vapor deposition (CVD) on silica substrates and on stainless steel gauze woven from a wire ...
  • Lattice dynamics of ZnAl2O4 and ZnGa2O4 under high pressure 
    LÓPEZ-MORENO, S.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ROMERO, A. H.; MANJÓN, F. J.; ERRANDONEA, D.; RUSU, E.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work we present a first-principles density functional study of the vibrational properties of ZnAl2O4 and ZnGa2O4 as function of hydrostatic pressure. Based on our previous structural characterization of these two ...
  • Lattice dynamics study of HgGa2Se4 at high pressures 
    VILAPLANA, R.; GOMIS, O.; MANJÓN, F. J.; ORTIZ, H.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; URSAKI, V. V.; TIGINYANU, I. M. (American Chemical Society, 2013)
    We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high ...
  • Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities 
    GEORGOBIANI, A. N.; AMINOV, U. A.; DRAVIN, V. A.; LEPNEV, L. S.; MULLABAEV, I. D.; URSAKI, V. V.; ILJUKHINA, Z. P. (ELSEVIER, 1999)
    The investigation of traps and recombination centres in structures based on ZnSe single crystals by means of the deep level transient spectroscopy, photoluminescence and electroluminescence methods are presented. The ...
  • Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals 
    GEORGOBIANI, A. N.; GRUZINTSEV, A. N.; RATSEEV, S. A.; TEZLEVAN, V. E.; TIGINYANU, I. M.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 1986)
    Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy ...
  • Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching 
    TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; LANGA, S.; HUBBARD, S.; PAVLIDIS, D.; FÖLL, H. (American Institute of Physics, 2003)
    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence ...
  • Luminescence properties of a ZnO–In2O3 composite 
    URSAKI, V. V.; TIGINYANU, I. M.; BURLACU, A.; ZALAMAI, V.; JITARI, V. F. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2006)
    ZnO–In2O3 composite was prepared by thermal annealing of ZnIn2S4 crystals. Energy dispersive X-ray analysis demonstrated that annealing results in the formation of a composite consisting of ZnO and In2O3 phases with the ...
  • Luminescent and Photoconductive Properties of AgGa2.5In2.5S8 and CuGa2.5In2.5S8 New Semiconductors 
    ANEDDA, A.; SERPI, A.; MOLDOVYAN, N. A.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    Results of a complex study of photoluminescence (PL), photoconductivity (PC) and photo-voltaic (PV) spectra in AgGa2.5In2.5S8 and CuGa2.5In2.5S8 single crystals are presented. The values of indirect (Egi=2.25 eV) and direct ...
  • Luminescent materials based on semiconductor compound templates for random laser applications 
    URSAKI, V. V.; TIGINYANU, I. M.; SIRBU, L.; ENACHI, M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    A survey of methods for the preparation of luminescent nanocomposite materials with the focus on random laser media on the basis of porous semiconductor and dielectric templates is presented. Media with controlled light ...
  • Metal nanostructured ferromagnetic as a possible source of optical magnetism 
    SERGENTU, V. V.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 2012)
    It is shown analytically that plasmon-mediated magnetic response can be realized at optical frequencies in nanostructured magnetized metallic ferromagnetics under certain restrictions on their electronic subsystem. According ...
  • Micrometer-size GaN Schottky-diodes for mm-wave frequency multipliers 
    COJOCARI, O.; POPA, V.; URSAKI, V. V.; TIGINYANU, I. M.; MUTAMBA, K.; SAGLAM, M.; HARTNAGEL, H. L. (IEEE, 2004)
    Small-size Pt/n-GaN Schottky diodes are fabricated using electrochemical technique for anode metallisation. Effects of surface passivation and thermal annealing on the interface quality are studied using PL-measurements ...
  • Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte 
    VOLCIUC, O.; MONAICO, E.; ENACHI, M.; URSAKI, V. V.; PAVLIDIS, D.; POPA, V.; TIGINYANU, I. M. (ELSEVIER, 2010)
    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1×1017cm−3 and 1×1018cm−3 in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified ...
  • Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications 
    BRANISTE, T.; CIERS, Joachim; MONAICO, Ed.; MARTIN, D.; CARLIN, J.-F.; URSAKI, V. V.; SERGENTU, V. V.; TIGINYANU, I. M.; GRANDJEAN, N. (ELSEVIER, 2017)
    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) ...
  • Multiphonon resonant Raman scattering in ZnO crystals and nanostructured layers 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; RUSU, E. V.; EMELCHENKO, G. A.; MASALOV, V. M.; SAMAROV, E. N. (American Physical Society, 2004)
    Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk ZnO crystals and layers, including nanostructured and highly conductive films, excited by 351.1 and 363.8 nm laser lines in the temperature ...
  • Nanostructuring induced enhancement of radiation hardness in GaN epilayers 
    URSAKI, V. V.; TIGINYANU, I. M.; VOLCIUC, O.; POPA, V.; SKURATOV, V. A.; MORKOÇ, H. (American Institute of Physics, 2007)
    The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence (PL) and resonant Raman scattering (RRS) spectroscopy. A ...
  • Non-Linear Raman Scattering in I-III2-VI4 Compounds 
    FOMIN, V. M.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    The paper presents an experimental substantiation of the theory (based on the optical vibration anharmonism) of non-linear Raman scattering (RS) in defective II-III2-VI4 compounds. In the transparency region of those ...

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