Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals

GEORGOBIANI, A. N.; GRUZINTSEV, A. N.; RATSEEV, S. A.; TEZLEVAN, V. E.; TIGINYANU, I. M.; URSAKI, V. V.

Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals

GEORGOBIANI, A. N.; GRUZINTSEV, A. N.; RATSEEV, S. A.; TEZLEVAN, V. E.; TIGINYANU, I. M.; URSAKI, V. V.

URI: https://doi.org/10.1002/crat.2170210218
http://repository.utm.md/handle/5014/11568

Date: 1986

Abstract:

Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy positions of levels of antisite Incd and CdIn defects are found. The role of antisite defects in the process of conductivity compensation is analysed.